Abstract:Imprint lithography is an effective and well-known technique for replication of nano-scale features. Nanoimprint lithography (NIL) manufacturing equipment utilizes a patterning technology that involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. The technology faithfully reproduces patterns with a higher resolution and greater uniformity compared to those produced by photolithography equipment. Additionally, as this technology does not require an array of wide-diameter lenses and the expensive light sources necessary for advanced photolithography equipment, NIL equipment achieves a simpler, more compact design, allowing for multiple units to be clustered together for increased productivity. Previous studies have demonstrated NIL resolution better than 10nm, making the technology suitable for the printing of several generations of critical memory levels with a single mask. In addition, resist is applied only where necessary, thereby eliminating material waste. Computational technologies are still in the course of development for NIL. Only a few simulators are applicable to the nanoimprint process, and these simulators are desired by device manufacturers as part of their daily toolbox. The most challenging issue in NIL process simulation is the scale difference of each component of the system. The template pattern depth and the residual resist film thickness are generally of the order of a few tens of nanometers, while the process needs to work over the entire shot size, which is typically of the order of 10 mm square. This amounts to a scale difference of the order of 106. Therefore, in order to calculate the nanoimprint process with conventional fluid structure interaction (FSI) simulators, an enormous number of meshes is required, which results in computation times that are unacceptable. In this paper, we introduce a new process simulator which directly inputs the process parameters, simulates the whole imprinting process, and evaluates the quality of the resulting resist film. To overcome the scale differences, our simulator utilizes analytically integrated expressions which reduce the dimensions of the calculation region. In addition, the simulator can independently consider the positions of the droplets and calculate the droplet coalescence, thereby predicting the distribution of the non-fill areas which originate from the trapped gas between the droplets. The simulator has been applied to the actual NIL system and some examples of its applications are presented in this work.

Modeling and simulation of patterning diblock copolymers through nanoimprint lithography

Boundary-Directed Epitaxy of Block Copolymers

Recent progress in non-photolithographic patterning of polymer thin films

Organization of Block Copolymers using NanoImprint Lithography: Comparison of Theory and Experiments

New Strategy of Nanolithography Via Controlled Block Copolymer Self-Assembly

Directed self-assembly of high-chi block copolymer for nano fabrication of bit patterned media via solvent annealing

Blending Linear and Cyclic Block Copolymers to Manipulate Nanolithographic Feature Dimensions

Modeling of block copolymer dry etching for directed self-assembly lithography

Simultaneous fabrication of line and dot dual nanopatterns using miktoarm block copolymer with photocleavable linker

Direct Printing of Ultrathin Block Copolymer Film with Nano‐in‐Micro Pattern Structures

Directed Block Copolymer Self-Assembly Implemented Via Surface-Embedded Electrets

NIL integration using computational lithography for semiconductor device manufacturing

Patterning, mask life, throughput and overlay improvements for high volume semiconductor manufacturing using nanoimprint lithography

High molecular weight block copolymer lithography for nanofabrication of hard mask and photonic nanostructures

Evolutionary Optimization of Directed Self-Assembly of Triblock Copolymers on Chemically Patterned Substrates.

Directed Self-Assembly of Triblock Copolymer on Chemical Patterns for Sub-10-nm Nanofabrication via Solvent Annealing

Molecular dynamics simulation study of the degradation of polymer nanopatterns created by nanoimprint

Sequential Nanopatterned Block Copolymer Self-Assembly on Surfaces.

Constructing a Comprehensive Nanopattern Library through Morphological Transitions of Block Copolymer Surface Micelles via Direct Solvent Immersion

Tailoring Nanostructures Using Copolymer Nanoimprint Lithography

Enabling Sub-10nm Lithography with Atomic Layer Deposition and Block Copolymer Self Assembly