Excellent ferroelectric properties sensitive to external voltage in PZT/LNO/NSTO heterostructures prepared by a sol-gel method

Jun Liang Lin,Ying Jie Wu,Chao Li,Shi Ming Wang

DOI: https://doi.org/10.1016/j.mtcomm.2022.104981

IF: 3.8

2022-11-24

Materials Today Communications

Abstract:In the rapidly developing information age, various electronic devices made of ferroelectric films have been widely used. However, the current market demand for high electrical performance of electronic devices strongly depends on high operating voltage, which brings the problem of high power consumption and high heat generation. Here, Pb(Zr0.52Ti0.48)O 3 /Nb-doped STO (PZT/NSTO) and LaNiO 3 (LNO)-buffered PZT/LNO/NSTO heterostructures have been prepared by a sol-gel method, respectively. The experimental results show that compared with the PZT/NSTO heterostructures, the PZT/LNO/NSTO heterostructures have larger remanent polarizations, and the coercive voltage and saturation voltage are significantly reduced. This is because the introduction of the LNO buffer layer can change the band structure of PZT/NSTO interface and therefore dramatically reduce the built-in electric field between PZT and NSTO. Therefore, the polarization behaviors become more sensitive to the response of external voltage. Combined with the in-plane compressive strain of LNO on PZT, the polarization properties in the PZT/LNO/NSTO heterostructures have also been enhanced. The remanent polarization can reach 35.5 μC/cm 2 at only 3 V and 59.8 μC/cm 2 at 10 V. This work provides a reference for the preparation of high-quality ferroelectric thin films with high electrical performance and low power consumption.

materials science, multidisciplinary