Abstract:As an eco-friendly thermoelectric material, Cu2SnSe3 has recently drawn much attention. However, its high electrical resistivity ρ and low thermopower S prohibit its thermoelectric performance. Herein, we show that a widened band gap and the increased density of states are achieved via S alloying, resulting in 1.6 times enhancement of S (from 170 to 277 μV/K). Moreover, doping In at the Sn site can cause a 19-fold decrease of ρ and a 2.2 times enhancement of S (at room temperature) due to both multivalence bands' participation in electrical transport and the further enhancement of the density of states effective mass, which allows a sharp increase in the power factor. As a result, PF = 9.3 μW cm–1 K–2 was achieved at ∼800 K for the Cu2Sn0.82In0.18Se2.7S0.3 sample. Besides, as large as 44% reduction of lattice thermal conductivity is obtained via intensified phonon scattering by In-doping-induced formation of multidimensional defects, such as Sn vacancies, dislocations, twin boundaries, and CuInSe2 nanoprecipitates. Consequently, a record high figure of merit of ZT = 1.51 at 858 K is acquired for Cu2Sn0.82In0.18Se2.7S0.3, which is 4.7-fold larger than that of pristine Cu2SnSe3.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.1c03120?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.1c03120</a>.Temperature dependence of Cp for Cu2SnSe3, Cu2SnSe2.7S0.3, and Cu2Sn0.82In0.18Se2.7S0.3; phase characterization for all investigated samples; temperature dependence of the ZT value for Cu2SnSe3–xSx and the repeatability of thermoelectric performance for Cu2Sn0.82In0.18Se2.7S0.3; calculation details of md*; optical band gaps for S-alloyed Cu2SnSe3; unfolded effective band structure of Cu2SnSe3; calculation of lattice thermal conductivity via the Debye–Callaway model; and the calculation details of thermopower-dependent thermoelectric properties (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.1c03120/suppl_file/nn1c03120_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Argon Plasma Bombardment Induces Surface‐Rich Sn Vacancy Defects to Enhance the Thermoelectric Performance of Polycrystalline SnSe

Enhanced Thermoelectric Properties of SnSe Thin Films Grown by Pulsed Laser Glancing-Angle Deposition

Enhancement of Thermoelectric Performance of Layered SnSe2 by Synergistic Modulation of Carrier Concentration and Suppression of Lattice Thermal Conductivity

Achieving High Thermoelectric Figure of Merit in Polycrystalline SnSe Via Introducing Sn Vacancies

Polycrystalline SnSe–Sn1–vS Solid Solutions: Vacancy Engineering and Nanostructuring Leading to High Thermoelectric Performance

Defect Engineering in Solution-Processed Polycrystalline SnSe Leads to High Thermoelectric Performance

Defect Engineering Boosted Ultrahigh Thermoelectric Power Conversion Efficiency in Polycrystalline SnSe

High thermoelectric properties realized in polycrystalline (Ag, Ga) Co-doped SnSe via two-steps point defects modulation

Boosting Thermoelectric Performance of Cu 2 SnSe 3 via Comprehensive Band Structure Regulation and Intensified Phonon Scattering by Multidimensional Defects

Achieving high thermoelectric performance with Pb and Zn codoped polycrystalline SnSe via phase separation and nanostructuring strategies

Synergistic Optimization of Thermoelectric Performance in SnSe2 through co-doping: Anionic Vacancy Formation and Band Engineering

A Solvothermal Synthetic Environmental Design for High‐Performance SnSe‐Based Thermoelectric Materials

Thermoelectric Performance Enhancement in SnS Polycrystals Owing to Hole Doping Combined with Textured Microstructures

Lattice plainification advances highly effective SnSe crystalline thermoelectrics

Cold Sintering Mediated Engineering of Polycrystalline SnSe with High Thermoelectric Efficiency

Modulating Electrical Transport Properties of SnSe Crystal to Improve the Thermoelectric Power Factor by Adjusting Growth Method

Robustly Boosting Thermoelectric Performance of N‐Type PbSe via Lattice Plainification and Dynamic Doping

Optimization of Sodium Hydroxide for Securing High Thermoelectric Performance in Polycrystalline Sn1 − Xse Via Anisotropy and Vacancy Synergy

Lattice Strain Leads to High Thermoelectric Performance in Polycrystalline SnSe

Pseudo‐Nanostructuring and Grain Refinement Enhance the Near‐Room‐Temperature Thermoelectric Performance in n‐type PbSe

Introducing PbSe quantum dots and manipulating lattice strain contributing to high thermoelectric performance in polycrystalline SnSe