SRAM-Based PUF Reliability Prediction Using Cell-Imbalance Characterization in the State Space Diagram

Gabriel Torrens,Abdel Alheyasat,Bartomeu Alorda,Sebastia A. Bota
DOI: https://doi.org/10.3390/electronics11010135
2024-12-05
Abstract:This work proposes a methodology to estimate the statistical distribution of the probability that a 6T bit-cell starts up to a given logic value in SRAM memories for PUF applications. First, the distribution is obtained experimentally in a 65-nm CMOS device. As this distribution cannot be reproduced by electrical simulation, we explore the use of an alternative parameter defined as the distance between the origin and the separatrix in the bit-cell state space to quantify the mismatch of the cell. The resulting distribution of this parameter obtained from Monte Carlo simulations is then related to the start-up probability distribution using a two-component logistic function. The reported results show that the proposed imbalance factor is a good predictor for PUF-related reliability estimation with the advantage that can be applied at the early design stages.
Cryptography and Security
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to develop a method to predict the probability distribution of cells in SRAM (Static Random - Access Memory) that are suitable for PUF (Physical Unclonable Function). Specifically, the author hopes to estimate the proportion of cells with a high startup probability at the early design stage, thereby improving the reliability of PUF. ### Problem Background 1. **Application Background of SRAM - PUF**: - PUF is a security technology based on hardware characteristics and can be used to generate unique identifiers and keys. - SRAM - PUF utilizes the difference in startup values of SRAM cells at power - on due to random parameter variations during the manufacturing process. - These differences make the startup values of SRAM cells on each chip unique and unpredictable, so they can be used as the basis for PUF. 2. **Existing Challenges**: - Experimental results show that not all SRAM cells have stable startup values, and the startup values of some cells may change over time or with environmental conditions. - This instability affects the reliability of PUF, that is, some cells may not start up to the same logical value every time. - Therefore, a method is needed to predict in advance which cells can be reliably used for PUF to ensure its stability and security. ### Research Objectives The main objective of the paper is to develop a method to predict the startup probability distribution of each cell in SRAM, especially those cells with a high startup probability. Through this method, it is possible to identify at the early design stage which cells are suitable for PUF, thereby improving the reliability of the overall system. ### Solutions To achieve this goal, the author proposes the following methods: 1. **Introducing the Imbalance Factor SD (Separatrix Distance)**: - SD is a parameter that measures the internal asymmetry of SRAM cells, defined as the distance from the origin (0, 0) to the separatrix. - The separatrix is a line that divides the state space into two regions, each corresponding to a stable startup state. - The larger the SD, the more the cell tends to start up to a specific logical value, and thus is more suitable as a PUF. 2. **Using Monte Carlo Simulation to Calculate the SD Distribution**: - Through Monte Carlo simulation, a large number of SRAM cells are simulated, and the SD value of each cell is calculated. - These simulation data can be used to predict the startup probability distribution of cells. 3. **Establishing the Relationship between SD and Startup Probability**: - Use experimental data to calibrate a transfer function to convert the simulated SD distribution into a startup probability distribution. - In this way, it can be predicted which cells have a higher startup probability, thereby determining whether they are suitable for PUF. ### Conclusions Through the above methods, the author has successfully developed a method that can predict the startup probability distribution of SRAM cells at the early design stage. This method not only improves the reliability of PUF but can also be applied to other application scenarios that require high reliability.