Abstract:Bilayers of transition-metal dichalcogenides show many exciting features, including long-lived interlayer excitons and wide bandgap tunability using strain. Not many investigations on experimental determinations of deformation potentials relating changes in optoelectronic properties of bilayer WSe$_2$ with the strain are present in the literature. Our experimental study focuses on three widely investigated high-symmetry points, K$_{c}$, K$_{v}$, and Q$_{c}$, where subscript c (v) refers to the conduction (valence) band, in the Brillouin zone of bilayer WSe$_2$. Using local biaxial strains produced by nanoparticle stressors, a theoretical model, and by performing the spatially- and spectrally-resolved photoluminescence measurements, we determine absolute deformation potential of -5.10 $\pm$ 0.24 eV for Q$_{c}$-K$_{v}$ indirect bandgap and -8.50 $\pm$ 0.92 eV for K$_{c}$-K$_{v}$ direct bandgap of bilayer WSe$_2$. We also show that $\approx$0.9% biaxial tensile strain is required to convert an indirect bandgap bilayer WSe$_2$ into a direct bandgap semiconductor. Moreover, we also show that a relatively small amount of localized strain $\approx$0.4% is required to make a bilayer WSe$_2$ as optically bright as an unstrained monolayer WSe$_2$. The bandgap deformation potentials measured here will drive advances in flexible electronics, sensors, and optoelectronic- and quantum photonic- devices through precise strain engineering.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to determine the deformation potentials of the absolute band gap of tungsten diselenide (WSe₂) bilayer materials under different strain conditions. Specifically, the research focuses on: 1. **Measuring the band - gap deformation potentials at high - symmetry points**: The paper focuses on three high - symmetry points $K_c$, $K_v$ and $Q_c$ in the Brillouin zone and measures the band - gap deformation potentials at these points in bilayer WSe₂. These measurement results are crucial for understanding how strain affects the optoelectronic properties of bilayer WSe₂. 2. **Band - gap regulation through local biaxial strain**: The research uses nanoparticle stress sources to generate local biaxial strain and combines spatially and spectrally resolved photoluminescence (PL) measurement techniques to determine the absolute band - gap deformation potentials of bilayer WSe₂ under different strain conditions. In particular, the research finds that only about 0.9% biaxial tensile strain is required to transform bilayer WSe₂ with an indirect band gap into a direct - band - gap semiconductor. 3. **Revealing the influence of a small amount of local strain on optical properties**: The research shows that only about 0.4% local strain is required to make the optical brightness of bilayer WSe₂ comparable to that of unstrained monolayer WSe₂, which provides new ideas for the development of high - efficiency optoelectronic devices. ### Main conclusions - **Absolute deformation potential of the K_c - Kv direct band gap**: The measured absolute deformation potential is $- 8.50\pm0.92$ eV. - **Absolute deformation potential of the Q_c - Kv indirect band gap**: The measured absolute deformation potential is $-5.10\pm0.24$ eV. - **Strain conversion mechanism**: Only about 0.9% biaxial tensile strain is required to transform bilayer WSe₂ with an indirect band gap into a direct - band - gap semiconductor, while uniaxial tensile strain requires about 2.63% to achieve the same effect. - **Optical enhancement under low strain**: Only about 0.4% local strain can significantly enhance the photoluminescence intensity of bilayer WSe₂, making it comparable to that of unstrained monolayer WSe₂. These research results not only help to deeply understand the strain - engineering characteristics of transition - metal dichalcogenide (TMDs) materials, but also provide important theoretical and technical support for the development of flexible electronic devices, sensors and quantum - photonic devices.

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