Abstract:Abstract In two-dimensional transition metal dichalcogenides, normal strain can modulate electronic band structures, yet leaving the optical selection rules intact. In contrast, a shear strain can perturb the spin-valley locked band structures and possibly induce mixing of the spin subbands which in turn can transfer oscillator strength between spin-allowed bright and spin-forbidden dark excitons. Here, we report a novel scheme to manipulate photoluminescence (PL) in a monolayer WSe 2 -MoSe 2 lateral heterostructures, controlled by an external bending method in which strong out-of-plane shear strain (OSS) of up to 5.6% accompanies weak in-plane normal strain up to 0.72%. The spectra revealed a striking dependence on the bending direction that is stagnant in the negative (compressive) strain region and then rapidly changes with increasing positive (tensile) strain. The dependency of the PL signal under tensile bending was represented not only by the large energy shift ( > 40 meV) of the lowest excited states of both the WSe 2 and MoSe 2 monolayers, but also by the tendency to violate the optical selection rules that brightens (darkens) the excitons of the WSe 2 (MoSe 2 ) side. The analyses on the observed energy shifts and PL intensity changes confirm the different origins in compressive bending compared with tensile bending. The well-established band-anticrossing is identified to be affecting only the compressive deformation region. The spectral changes in the tensile region, on the other hand, originates mainly from the generation of an off-diagonal perturbation to a spin-specific Hamiltonian induced by OSS. The degree of spin-state mixing, which correlates precisely with the spin-flip coefficient of the theoretical model, is further represented by the OSS matrix elements, the spin splitting energy, and the shear deformation potential.

Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain

Phonon Softening and Direct to Indirect Bandgap Crossover in Strained Single Layer MoSe2

Using strain to alter the energy bands of the monolayer MoSe2: A systematic study covering both tensile and compressive states

Biaxial strain tuning of excitons in monolayer MoSe$_2$ by high-temperature physical vapor deposition

Control of biaxial strain in single-layer Molybdenite using local thermal expansion of the substrate

Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2

Biaxial versus uniaxial strain tuning of single-layer MoS$_2$

Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides

Monitoring Local Strain Vector in Atomic-Layered MoSe2 by Second-Harmonic Generation

A strain tunable single-layer MoS2 photodetector

Largely tunable band structures of few-layer InSe by uniaxial strain

Strain-modulated optical response in 2D MoSe2 made by Na-assisted CVD on glass

Strain Induced Indirect-to-Direct Bandgap Transition, Photoluminescence Enhancement, and Linewidth Reduction in Bilayer MoTe2

Tuning Optical Signatures of Single- and Few-Layer MoS2 by Blown-Bubble Bulge Straining Up to Fracture.

Effect of Strain on the Band Gap of Monolayer MoS$_2$

Shear-strain-mediated photoluminescence manipulation in two-dimensional transition metal dichalcogenides

Ab-Initio Simulations of Monolayer InSe and MoS2 Strain Effect: from Electron Mobility to Photoelectric Effect

Strain Effects on Electronic States and Lattice Vibration of Monolayer MoS2

Investigation of Uniaxial Strain in Twisted Few-Layer MoS2

Ultrasensitive Tunability of the Direct Bandgap of Two-dimensional InSe Flakes via Strain Engineering

Tuning electronic properties in transition metal dichalcogenides MX$_2$ (M= Mo/W, X= S/Se) heterobilayers with strain and twist angle