Abstract:Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-T c superconductivity appear. Recent efforts have been focused on electrostatic doping of such materials to probe the underlying physics without introducing disorder as well as to build field-effect transistors that may complement conventional semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) technology. This review focuses on metal-insulator transition mechanisms in correlated electron materials and three-terminal field effect devices utilizing such correlated oxides as the channel layer. We first describe how electron-disorder interaction, electron-phonon interaction, and/or electron correlation in solids could modify the electronic properties of materials and lead to metal-insulator transitions. Then we analyze experimental efforts toward utilizing these transitions in field effect transistors and their underlying principles. It is pointed out that correlated electron systems show promise among these various materials displaying phase transitions for logic technologies. Furthermore, novel phenomena emerging from electronic correlation could enable new functionalities in field effect devices. We then briefly review unconventional electrostatic gating techniques, such as ionic liquid gating and ferroelectric gating, which enables ultra large carrier accumulation density in the correlated materials which could in turn lead to phase transitions. The review concludes with a brief discussion on the prospects and suggestions for future research directions in correlated oxide electronics for information processing.

Charge gain via solid-state gating of an oxide Mott system

Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering

Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

Full Control of Solid-State Electrolytes for Electrostatic Gating

Electronics with correlated oxides: SrVO$_3$/SrTiO$_3$ as a Mott transistor

Realizing Wafer‐Scale and Low‐Voltage Operation MoS2 Transistors Via Electrolyte Gating

Interfacial Charge Engineering in Ferroelectric‐Controlled Mott Transistors

Gate Induced Metal-Insulator Transition in MoS2 by Solid Superionic Conductor LaF3.

Mott transistor with giant switching ratio at room temperature and its emulation of artificial synapses

Mott materials: unsuccessful metals with a bright future

Investigation of charge trapping mechanism in MoS2field effect transistor by incorporating Al into host La2O3as gate dielectric

Correlated Electron Materials and Field Effect Transistors for Logic: A Review

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories

Electrostatic modification of infrared response in gated structures based on VO2

Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

Boltzmann Switching MoS2 Metal–Semiconductor Field‐Effect Transistors Enabled by Monolithic‐Oxide‐Gapped Metal Gates at the Schottky–Mott Limit (Adv. Mater. 29/2024)

Local gate control of Mott metal-insulator transition in a 2D metal-organic framework

Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

Proton‐Mediated Phase Control in Flexible and Transparent Mott Transistors