Electronics with correlated oxides: SrVO$_3$/SrTiO$_3$ as a Mott transistor

Zhicheng Zhong,Markus Wallerberger,Jan M. Tomczak,Ciro Taranto,Nicolaus Parragh,Alessandro Toschi,Giorgio Sangiovanni,Karsten Held
DOI: https://doi.org/10.1103/PhysRevLett.114.246401
2013-12-20
Abstract:We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO$_3$ on a SrTiO$_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn triggers a Mott-Hubbard transition. Two layers of SrVO$_3$ are just at the verge of a Mott-Hubbard transition and hence ideally suited for technological applications of the Mott-Hubbard transition: the heterostructure is highly sensitive to strain, electric field, and temperature. A gate voltage can also turn the insulator into a metal, so that a transistor with ideal on-off (metal-insulator) switching properties is realized.
Strongly Correlated Electrons
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