ScAlN-on-SiC Ku-Band Solidly-Mounted Bidimensional Mode Resonators

Luca Colombo,Luca Spagnuolo,Kapil Saha,Gabriel Giribaldi,Pietro Simeoni,Matteo Rinaldi
2024-11-21
Abstract:This letter reports on Solidly-Mounted Bidimensional Mode Resonators (S2MRs) based on 30% Scandium-doped Aluminum Nitride (ScAlN) on Silicon Carbide (SiC), operating near 16 GHz. Experimental results demonstrate mechanical quality factors (Qm) as high as 380, electromechanical coupling coefficients (kt2) of 4.5%, an overall Figure of Merit (FOM = Qmkt2) exceeding 17, and power handling greater than 20 dBm for devices closely matched to 50 ohm. To the best of the authors' knowledge, S2MRs exhibit the highest Key Performance Indicators (KPIs) among solidly mounted resonators in the Ku band, paving the way for the integration of nanoacoustic devices on fast substrates with high-power electronics, tailored for military and harsh environment applications.
Systems and Control
What problem does this paper attempt to address?
This paper aims to solve the problem of realizing high - performance solid - state - mounted two - dimensional mode resonators (S2MRs) in the Ku - band (around 16 GHz). Specifically, the research objective is to develop S2MRs based on 30% scandium - doped aluminum nitride (ScAlN) thin films and mount them on silicon carbide (SiC) substrates to achieve the following key performance indicators: 1. **Mechanical quality factor (\(Q_m\))**: As high as 380. 2. **Electromechanical coupling coefficient (\(k^2_t\))**: Exceeding 4.5%. 3. **Comprehensive performance index (Figure of Merit, \(FOM = Q_m\cdot k^2_t\))**: Exceeding 17. 4. **Power handling capacity**: Greater than 20 dBm and well - matched to 50 Ω. These performance indicators are the highest among solid - state - mounted resonators in the Ku - band, which paves the way for the monolithic integration of nano - acoustic devices on fast substrates, especially suitable for military and harsh - environment applications. In addition, these devices also have the compatibility of high - power electronic devices and the ability to operate reliably at high temperatures. Through these improvements, S2MRs are expected to become key components in next - generation communication systems (such as 5G and 6G), especially in chip filter designs that require compactness, high performance, and large - scale manufacturing. These filters can be used in handheld and wearable devices, as well as military applications such as satellite communications and active electronically scanned arrays (AESA).