Abstract:Despite constituting a smaller fraction of the qubits electromagnetic mode, surfaces and interfaces can exert significant influence as sources of high-loss tangents, which brings forward the need to reveal properties of these extended defects and identify routes to their control. Here, we examine the structure and composition of the metal-substrate interfacial layer that exists in Ta/sapphire-based superconducting films. Synchrotron-based X-ray reflectivity measurements of Ta films, commonly used in these qubits, reveal an unexplored interface layer at the metal-substrate interface. Scanning transmission electron microscopy and core-level electron energy loss spectroscopy identified an approximately 0.65 \ \text{nm} \pm 0.05 \ \text{nm} thick intermixing layer at the metal-substrate interface containing Al, O, and Ta atoms. Density functional theory (DFT) modeling reveals that the structure and properties of the Ta/sapphire heterojunctions are determined by the oxygen content on the sapphire surface prior to Ta deposition, as discussed for the limiting cases of Ta films on the O-rich versus Al-rich Al2O3 (0001) surface. By using a multimodal approach, integrating various material characterization techniques and DFT modeling, we have gained deeper insights into the interface layer between the metal and substrate. This intermixing at the metal-substrate interface influences their thermodynamic stability and electronic behavior, which may affect qubit performance.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: to reveal the origin and properties of the metal - substrate interface layer in Ta/sapphire superconducting thin films. Specifically, the researchers are concerned with: 1. **Existence and characteristics of the interface layer**: In Ta/sapphire superconducting thin films, the interface layer between the metal and the substrate has an important impact on the performance of qubits. These interface layers may be the source of high - loss tangents, so it is necessary to have an in - depth understanding of their structure and composition. 2. **Influence of the interface layer**: The formation of the interface layer will affect the thermodynamic stability and electronic behavior, and thus may affect the performance of qubits, especially their coherence time (T1 lifetime). By understanding the properties of these interface layers, methods for controlling and optimizing them can be found, thereby improving the performance of superconducting qubits. 3. **Understanding of the microscopic mechanism**: By combining multiple material characterization techniques (such as synchrotron radiation X - ray reflectivity, scanning transmission electron microscopy, etc.) and density - functional - theory (DFT) modeling, the researchers hope to reveal the formation mechanism of the interface layer and understand how different synthesis/processing conditions affect the structure and properties of these interface layers. ### Main research contents - **Experimental methods**: - Use synchrotron radiation X - ray reflectivity (XRR) to measure the thickness, electron density and roughness of Ta films. - Use high - angle annular dark - field scanning transmission electron microscopy (HAADF - STEM) and electron energy loss spectroscopy (EELS) for chemical profile analysis to obtain the depth information of the metal - substrate interface. - Conduct X - ray diffraction (XRD) and transmission electron microscopy (TEM) measurements to evaluate the phase purity and epitaxial relationship of Ta films. - **Theoretical modeling**: - Use density - functional - theory (DFT) modeling to study the structure and properties of Ta/sapphire heterojunctions, especially the influence of oxygen content on the formation of the interface layer. ### Research results - A mixed layer with a thickness of about 0.65 nm ± 0.05 nm, which contains Al, O and Ta atoms, was found to exist at the metal - substrate interface. - DFT modeling shows that the structure and properties of Ta/sapphire heterojunctions are mainly determined by the oxygen content on the sapphire surface before deposition. - Combining experimental and theoretical results, the formation mechanism of the interface layer and its influence on the performance of superconducting thin films were revealed. ### Significance These findings provide valuable insights for controlling the structure and composition of the metal - substrate interface, which is helpful for developing qubits with longer coherence time and promoting the development of quantum computing technology.

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