Abstract:Motivated by recent advancements highlighting Ta as a promising material in low-loss superconducting circuits and showing long coherence times in superconducting qubits, we have explored the effect of cryogenic temperatures on the growth of Ta and its integration in superconducting circuits. Cryogenic growth of Ta using a low temperature molecular beam epitaxy (MBE) system is found to stabilize single phase $\alpha$-Ta on several different substrates, which include Al$\mathrm{_2}$O$\mathrm{_3}$(0001), Si(001), Si(111), SiN${_x}$, and GaAs(001). The substrates are actively cooled down to cryogenic temperatures and remain < 20 K during the Ta deposition. X-ray $\theta$-2$\theta$ diffraction after warming to room temperature indicates the formation of polycrystalline $\alpha$-Ta. The 50 nm $\alpha$-Ta films grown on Al$\mathrm{_2}$O$\mathrm{_3}$(0001) at a substrate manipulator temperature of 7 K have a room temperature resistivity ($\mathrm{\rho _{300 K}}$) of 13.4 $\mathrm{\mu \Omega}$cm, a residual resistivity ratio (RRR) of 17.3 and a superconducting transition temperature (T$_C$) of 4.14 K, which are comparable to bulk values. In addition, atomic force microscopy (AFM) indicates that the film grown at 7 K with an RMS roughness of 0.45 nm was significantly smoother than the one grown at room temperature. Similar properties are found for films grown on other substrates. Results for films grown at higher substrate manipulator temperatures show higher $\mathrm{\rho _{300 K}}$, lower RRR and Tc, and increased $\beta$-Ta content. Coplanar waveguide resonators with a gap width of 3 $\mathrm{\mu}$m fabricated from cryogenically grown Ta on Si(111) and Al$\mathrm{_2}$O$\mathrm{_3}$(0001) show low power Q$_i$ of 1.9 million and 0.7 million, respectively, indicating polycrystalline $\alpha$-Ta films may be promising for superconducting qubit applications even though they are not fully epitaxial.

Grain size in low loss superconducting Ta thin films on c-axis sapphire

Cryogenic growth of tantalum thin films for low-loss superconducting circuits

Growth and Structure of alpha-Ta films for Quantum Circuit Integration

Size dependent phase transformation and mechanical behaviors in nanocrystalline Ta thin films

Tantalum thin films sputtered on silicon and on different seed layers: material characterization and coplanar waveguide resonator performance

High-quality superconducting α-Ta film sputtered on heated silicon substrate

Two-Level Systems in Nucleated and Non-Nucleated Epitaxial alpha-Tantalum films

alpha-Ta Films on c-plane Sapphire with Enhanced Microstructure

Investigation of the deposition of $α$-tantalum (110) films on a-plane sapphire substrate by molecular beam epitaxy for superconducting circuit

Epitaxial α-Ta (110) film on a-plane sapphire substrate for superconducting qubits on wafer scale

Revealing the Origin and Nature of the Buried Metal-Substrate Interface Layer in Ta/Sapphire Superconducting Films

Chemical Mechanical Planarization for Ta-based Superconducting Quantum Devices

Ultrathin Magnesium-based Coating as an Efficient Oxygen Barrier for Superconducting Circuit Materials

Suppressed paramagnetism in amorphous Ta$_2$O$_{5-x}$ oxides and its link to superconducting qubit performance

Doubling of the superconducting transition temperature in ultra-clean wafer-scale aluminum nanofilms

Molecular beam epitaxy growth of superconducting tantalum germanide

Structure and Formation Mechanisms in Tantalum and Niobium Oxides in Superconducting Quantum Circuits

Near-field localization of the boson peak on tantalum films for superconducting quantum devices

Evolution of the Upper Critical Field and Superconducting Vortex Phase with Thickness in PLD-grown Ta Films

Stable and low loss oxide layer on α-Ta (110) film for superconducting qubits

Quantum Griffiths singularity in two-dimensional superconducting 4Ha-TaSe2 nanodevices