Abstract:HfO2-based ferroelectric materials are promising for the next generation of memory devices, attracting significant attention. However, their potential applications are significantly limited by fatigue and imprint phenomena, which affect device lifetime and memory capabilities. Here, to accurately describe the dynamics and field effects of HfO2, we adopt our newly developed DREAM-Allegro network scheme and develop a comprehensive machine-learning model for HfO2. Such model can not only predict the interatomic potential, but also predict Born effective charges. Applying such model, we explore the role of domain dynamics in HfO2 and find that the fatigue and imprint phenomena are closely related to the so-called E-path and T-path switching pathways. Based on the different atomic motions in the two paths, we propose that an inclined electric field can sufficiently suppress fatigue and enhancing the performance of HfO2-based ferroelectric devices.

What problem does this paper attempt to address?

This paper primarily investigates the phenomena of fatigue and imprint in hafnium-based oxide (HfO2-based) ferroelectric materials and proposes a method to effectively suppress the fatigue effect by applying a tilted electric field. Specifically, the paper addresses the following key issues: 1. **Mechanisms of Fatigue and Imprint Phenomena**: The authors reveal the critical role of ferroelectric domain walls in fatigue and imprint phenomena through molecular dynamics simulations. They define two ferroelectric switching paths—E-path and T-path—and analyze how these paths affect the fatigue and imprint characteristics of the material. - **E-path**: Involves switching between polar and non-polar subunits, with all oxygen atoms moving in the direction opposite to the applied electric field. - **T-path**: Affects only the polarized oxygen atoms, which pass through the hafnium plane, while the non-polarized oxygen atoms remain unchanged. 2. **Method to Suppress Fatigue**: The authors find that by changing the direction of the applied electric field (i.e., applying a tilted electric field), the T-path induced by the E-path can be effectively suppressed, thereby reducing the fatigue effect. When the electric field direction has a certain angle relative to the main axis of the material, the formation of the T-path becomes more difficult, which helps maintain the ferroelectric performance of the material. In summary, this paper delves into the microscopic mechanisms behind the fatigue and imprint phenomena in HfO2-based ferroelectric materials and proposes a novel method to improve the performance of such materials. This is of significant importance for advancing the development of next-generation memory devices and ferroelectric field-effect transistor technology.

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