Giant gate-controlled room temperature odd-parity magnetoresistance in magnetized bilayer graphene

Divya Sahani,Sunit Das,Kenji Watanabe,Takashi Taniguchi,Amit Agarwal,Aveek Bid

2024-07-19

Abstract:Magnetotransport measurements are crucial for understanding the Fermi surface properties, magnetism, and topology in quantum materials. Here, we report the discovery of giant room temperature odd-parity magnetoresistance (OMR) in a bilayer graphene (BLG) heterostructure interfaced with Cr$_2$Te$_2$Ge$_6$ (CGT). Using magnetotransport measurements, we demonstrate that the BLG/CGT heterostructure exhibits a significant antisymmetric longitudinal magnetoresistance, indicative of intrinsic time-reversal symmetry (TRS) breaking in the system. We show that the OMR is tunable via electrostatic gating. Additionally, the OMR is pronounced near the band edges and diminishes with increasing charge carrier density in graphene. Our theoretical analysis reveals that this phenomenon arises from the coupling of the out-of-plane components of Berry curvature and orbital magnetic moment to the applied magnetic field in a TRS-broken system. Our findings establish OMR as a significant probe for TRS breaking in quantum materials in which the crystal symmetries preclude the appearance of anomalous Hall effect.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to realize and understand the huge odd - parity magnetoresistance (OMR) in the bilayer graphene (BLG) - Cr₂Ge₂Te₆ (CGT) heterostructure at room temperature. Specifically, the research aims to:

1. **Discover and characterize the OMR phenomenon**: Through magnetotransport measurements, the researchers found that there is a significant antisymmetric longitudinal magnetoresistance in the BLG/CGT heterostructure, which indicates that the time - reversal symmetry (TRS) within the system is broken. The magnitude of OMR is the largest near the band edge and decreases as the charge - carrier density increases.

2. **Explore the tunability of OMR**: Research shows that OMR can be regulated by electrostatic gate voltage, which is of great significance for the development of new electronic devices based on this effect.

3. **Reveal the origin of OMR**: Theoretical analysis shows that OMR originates from the coupling between the out - of - plane components of Berry curvature and orbital magnetic moment and the applied magnetic field. These phenomena occur in systems where time - reversal symmetry is broken. In addition, the magnetic exchange coupling provided by CGT is a key factor for this phenomenon.

4. **Verify OMR as a new method for detecting TRS breaking**: Although certain crystal symmetries limit the appearance of the anomalous Hall effect (AHE), OMR can be used as a reliable probe to detect TRS breaking, especially in those materials where AHE disappears but still retains a finite odd - parity longitudinal magnetoresistance.

### Formula summary

In order to better understand the physical mechanism of OMR, the following key formulas are involved in the paper:

- **Linear magnetoconductivity**:
\[
\sigma_{xx}^{AS}(B)=-\frac{2e^2\tau}{\hbar}\sum_{p,k}v_x^0v_x^m\frac{\partial f_0^p}{\partial\varepsilon_p}+\frac{e^3\tau}{\hbar}\sum_{p,k}(\Omega\cdot B)v_x^0v_x^0\frac{\partial f_0^p}{\partial\varepsilon_p}+\frac{e^2\tau}{\hbar}\sum_{p,k}v_x^0v_x^0\left(\frac{\partial}{\partial\varepsilon}(m\cdot B)\frac{\partial f_0^p}{\partial\varepsilon_p}+(m\cdot B)\frac{\partial^2 f_0^p}{\partial\varepsilon_p^2}\right)
\]

where:
- \(v_x^0 = \frac{\nabla_k\varepsilon_0}{\hbar}\) is the band velocity
- \(v_x^m=\frac{\nabla_k(-m\cdot B)}{\hbar}\) is the band velocity correction caused by the coupling between the orbital magnetic moment \(m\) and the magnetic field \(B\)
- \(\tau\) is the scattering time
- \(f_0^p\) is the Fermi - Dirac distribution function in the equilibrium state

- **OMR parameter**:
\[
\alpha=\frac{dR_{AS}^{ij,kl}}{dB}
\]

This parameter is used to quantify the magnitude of OMR and decreases rapidly as the charge - carrier density \(n\) increases.

### Conclusion

In conclusion, this research not only reveals the origin of OMR and its regulation mechanism in the BLG/CGT heterostructure, but also shows the potential of OMR as a new method for detecting time - reversal symmetry breaking. This finding is of great significance for the future development of new magnetic sensors and storage devices based on two - dimensional materials.