Abstract:Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic layer, refers to a change in the longitudinal resistance upon the reversal of magnetization, which typically originates from the interaction of spin-current and magnetization at the interface. Because of UMR s linear dependence on applied charge current and magnetization, it can be used to electrically read the magnetization state. However, in conventional spin source materials, the spin polarization of an electric field induced spin current is restricted to be in the film plane and hence the ensuing UMR can only respond to the in plane component of the magnetization. On the other hand, magnets with perpendicular magnetic anisotropy (PMA) are highly desired for magnetic memory and spin-logic devices, while the electrical read out of PMA magnets through UMR is critically missing. Here, we report the discovery of an unconventional UMR in bilayer heterostructures of a topological semimetal (WTe2) and a PMA ferromagnetic insulator (Cr2Ge2Te6, CGT), which allows to electrically read the up and down magnetic states of the CGT layer by measuring the longitudinal resistance. Our theoretical calculations based on a tight binding model show that the unconventional UMR originates from the interplay of crystal symmetry breaking in WTe2 and magnetic exchange interaction across the WTe2 and CGT interface. Combining with the ability of WTe2 to obtain magnetic field free switching of the PMA magnets, our discoveries open an exciting pathway to achieve two terminal magnetic memory devices that operate solely on the spin orbit torque and UMR, which is critical for developing next-generation non volatile and low power consumption data storage technologies.

Colossal Magnetoresistance in Twisted Intertwined Graphene Spirals

Extremely large magnetoresistance in twisted intertwined graphene spirals

Large-area, Periodic, and Tunable Intrinsic Pseudo-Magnetic Fields in Low-Angle Twisted Bilayer Graphene

Large Oscillating Tunnel Magnetoresistance in Ferromagnetic Graphene Single Tunnel Junction

Van Der Waals Lattice-Induced Colossal Magnetoresistance in Cr2Ge2Te6 Thin Flakes.

Strain-induced phase transition and electron spin-polarization in graphene spirals

Spin Colossal Magnetoresistance in an Antiferromagnetic Insulator

Competing Correlated States and Abundant Orbital Magnetism in Twisted Monolayer-Bilayer Graphene

Giant Tunneling Magnetoresistance in Two-Dimensional Magnetic Tunnel Junctions Based on Double Transition Metal MXene ScCr2C2F2

Room-temperature colossal magnetoresistance in terraced single-layer graphene

Large Positive In-Plane Magnetoresistance Induced by Localized States at Nanodomain Boundaries in Graphene.

Phonon-Mediated Colossal Magnetoresistance in Graphene/Black Phosphorus Heterostructures

Unconventional Unidirectional Magnetoresistance in vdW Heterostructures

Observation of Magnetoresistance in CrI3/graphene Van Derwaals Heterostructures*

Layer-Dependent Giant Magnetoresistance in Two-Dimensional Cr PS 4 Magnetic Tunnel Junctions

First-principles Study on Electronic and Magnetic Properties of Twisted Graphene Nanoribbon and Möbius Strips

Bipolar spin-filtering and giant magnetoresistance effect in spin-semiconducting zigzag graphene nanoribbons.

Spatial Manipulating Spin-Polarization and Tunneling Patterns in Graphene Spirals Via Periphery Structural Modification

Momentum matching induced giant magnetoresistance in two-dimensional magnetic tunnel junctions

Colossal Magnon Magnetoresistance of Two-Dimensional Magnets

Mechanism of Mechanically Induced Optoelectronic and Spintronic Phase Transitions in 1D Graphene Spirals: Insight into the Role of Interlayer Coupling.