Abstract:Integration of Samarium Cobalt hard magnets on silicon requires buffer/protective layers that can enhance the magnetic properties of the magnet while preserving its structure and chemical composition after post-annealing treatments needed for the formation of the magnetically hard phase. In this work, a comparison of Samarium-Cobalt films for five different buffer/protective layers, namely Ti, W, TiW, Ta, Cr and two different annealing temperatures, 650°C and 750°C, is presented. Depending on materials and annealing temperatures, magnetic properties such as saturation and coercivity of the SmCo film can be finely tuned. We show that coercivity up to 3.65 T or saturation magnetization up to 0.95 T can be reached by proper choice of the relevant process parameters: deposition temperature, material for the buffer/protective layer and annealing temperature. Such value of coercivity is among the highest found in literature for thin films of SmCo.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: when integrating samarium - cobalt (SmCo) permanent magnet films on a silicon substrate, how to improve their magnetic properties and maintain structural stability and the integrity of chemical composition by selecting appropriate buffer/protective layer materials and optimizing deposition and annealing process parameters. Specifically, the research aims to finely regulate key magnetic performance indicators such as the coercivity and saturation magnetization of SmCo films by comparing different buffer/protective layer materials (such as Ti, W, TiW, Ta, Cr) and two different annealing temperatures (650 °C and 750 °C). ### Research Background and Problem Description Rare - earth - based (RE - based) magnetic materials have been widely studied in recent decades due to their excellent hard magnetic properties. In particular, samarium - cobalt (SmCo) materials, because of their high Curie temperature and good magnetic properties, have become ideal candidate materials for applications such as micro - electro - mechanical systems (MEMS). However, the integration of SmCo films on a silicon substrate is challenging, and especially after high - temperature annealing treatment, how to maintain their structural stability and magnetic properties is a problem that needs to be solved urgently. ### Specific Problems 1. **Selection of Buffer/Protective Layers**: What are the effects of different materials as buffer/protective layers on the magnetic properties of SmCo films? 2. **Effect of Annealing Temperature**: What are the effects of different annealing temperatures on the coercivity and saturation magnetization of SmCo films? 3. **Optimization of Deposition Conditions**: How to obtain the best magnetic properties by optimizing deposition conditions (such as deposition temperature, buffer layer materials, etc.)? ### Research Objectives - Verify the effects of different buffer/protective layer materials (Ti, W, TiW, Ta, Cr) on the magnetic properties of SmCo films through experiments. - Explore the specific effects of different annealing temperatures (650 °C and 750 °C) on the magnetic properties of SmCo films. - Optimize the deposition conditions to achieve SmCo films with high coercivity and high saturation magnetization. ### Key Findings - By selecting appropriate buffer/protective layer materials and optimizing the annealing temperature, the coercivity and saturation magnetization of SmCo films can be significantly improved. - The experimental results show that using Ta, TiW and W as buffer/protective layers and annealing at 750 °C can obtain the highest coercivity (up to 3.65 T) and relatively high saturation magnetization (up to 0.95 T). - Cr and Ti as buffer/protective layers exhibit poor magnetic properties and structural stability after high - temperature annealing and are not suitable for the integration of SmCo films. In conclusion, this research provides important guidance for the integration of SmCo films on a silicon substrate and is helpful for the development of high - performance micro - and nano - magnetic devices.

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