Abstract:Perovskite solar cells have been attracting more and more attentions due to their extraordinary performances in the photovoltaic field. In view of the highest certified power conversion efficiency of 25.5% that is much lower than the corresponding Shockley-Queisser limit, understanding and quantifying the main loss factors affecting the power conversion efficiency of perovskite solar cells are urgently needed. At present, the three loss mechanisms generally recognized are optical loss, ohmic loss, and non-radiative recombination loss. Including the trap-assisted bulk recombination and surface recombination, the non-radiative recombination is proved to be the dominant recombination mechanism prohibiting the increase of efficiency. In this work, based on semiconductor physics, the expressions of bulk and surface recombination currents are analytically derived. Then taking the optical loss, series and shunt resistance losses, and bulk and surface recombination losses into considerations, an equivalent circuit model is proposed to describe the current density-voltage characteristics of practical perovskite solar cells. Furthermore, by comparing to the drift-diffusion model, the pre-defined physical parameters of the drift-diffusion model well agree with the fitting parameters retrieved by the equivalent circuit model, which verifies the reliability of the proposed model. For example, the carrier lifetimes in the drift-diffusion model are consistent with the recombination factors in the equivalent circuit model. Moreover, when the circuit model is applied to analyze experimental results, the fitting outcomes show favorable consistency to the physical investigations offered by the experiments. And the relative fitting errors of the above cases are all less than 2%. Through employing the model, the dominant recombination type is clearly identified and split current density-voltage curves characterizing different loss mechanisms are offered, which intuitively reveals the physical principles of efficiency loss. Additionally, through calculating the efficiency loss ratios under the open-circuit voltage condition, quantifying the above-mentioned loss mechanisms becomes simple and compelling. The prediction capability of the model is expected to be enhanced if a series of light intensity dependent current density-voltage curves are fitted simultaneously. Consequently, this model offers a guideline to approach the efficiency limit from a circuit-level perspective. And the model is a comprehensive simulation and analysis tool for understanding the device physics of perovskite solar cells.

Equivalent circuit modeling of electron-hole recombination in semiconductor and mixed ionic-electronic conductor based devices

Hysteresis Modeling of Perovskite Solar Cells by an Equivalent Circuit Model

Loss Mechanism Analyses of Perovskite Solar Cells with Equivalent Circuit Model

Exploring the Way To Approach the Efficiency Limit of Perovskite Solar Cells by Drift-Diffusion Model

An improved model for describing the net carrier recombination rate in semiconductor devices

Simulating exciton delocalization in organic solar cells by a modified drift-diffusion model

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Loss Mechanism Analyses of Perovskite Solar Cells with an Equivalent Circuit Model

Analytical Model for Current-Voltage Characteristics in Perovskite Solar Cells Incorporating Bulk and Surface Recombination

On the modeling and simulation of reaction-transfer dynamics in semiconductor-electrolyte solar cells

Trap-Assisted Recombination in Disordered Organic Semiconductors Extended by Considering Density Dependent Mobility

On the effect of surface recombination in thin film solar cells, light emitting diodes and photodetectors

Coupled Charge and Radiation Transport Processes in Thermophotovoltaic and Thermoradiative Cells

Ionic-to-electronic current amplification in hybrid perovskite solar cells: ionically gated transistor-interface circuit model explains hysteresis and impedance of mixed conducting devices

Current–voltage characteristics of perovskite solar cells incorporating bulk and surface recombination: comparison of a physics-based model calculations with experiments

Origin of Reduced Polaron Recombination in Organic Semiconductor Devices

A Poisson–Nernst–Planck Model of Ion Transport and Interface Segregation in Metal–Insulator–Semiconductor Structures and Solar Cells

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

A Numerical Model of P–n Junctions Bordering on Surfaces

Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron‐Style Models

Decoupling Bimolecular Recombination Mechanisms in Perovskite Thin Films Using Photoluminescence Quantum Yield