Abstract:The continuous growth of global data traffic over the past three decades, along with advances in disaggregated computing architectures, presents significant challenges for optical transceivers in communication networks and high-performance computing systems. Specifically, there is a growing need to significantly increase data rates while reducing energy consumption and cost. High-performance optical modulators based on materials such as InP, thin-film lithium niobate (LiNbO3), or plasmonics have been developed, with LiNbO3 excelling in high-speed and low-voltage modulation. Nonetheless, the widespread industrial adoption of thin film LiNbO3 remains compounded by the rather high cost of the underlying 'on insulator' substrates -- in sharp contrast to silicon photonics, which can benefit from strong synergies with high-volume applications in conventional microelectronics. Here, we demonstrate an integrated 110 GHz modulator using thin-film lithium tantalate (LiTaO3) -- a material platform that is already commercially used for millimeter-wave filters and that can hence build upon technological and economic synergies with existing high-volume applications to offer scalable low-cost manufacturing. We show that the LiTaO3 photonic integrated circuit based modulator can support 176 GBd PAM8 transmission at net data rates exceeding 400 Gbit/s. Moreover, we show that using silver electrodes can reduce microwave losses compared to previously employed gold electrodes. Our demonstration positions LiTaO3 modulator as a novel and highly promising integration platform for next-generation high-speed, energy-efficient, and cost-effective transceivers.

Stable electro-optic modulators using thin-film lithium tantalate

High-efficiency Electro-Optic Modulators in Lithium Niobate on Insulator

Ultra-high Efficiency Electro-optic Modulator on Thin-film Lithium Niobate

Fabrication of a lithium tantalate temperature-stabilized optical modulator

Low Half-wave Voltage Thin-film Lithium Niobate Modulator with Ultra-flat Electro-optic Response

Ultrabroadband thin-film lithium tantalate modulator for high-speed communications

High-efficiency Thin-Film Lithium Niobate Modulator with Highly Confined Optical Modes

Lithium niobate thin film electro-optic modulator

Broadband Thin-Film Lithium Niobate Electro-Optic Modulator

Wideband Thin-Film Lithium Niobate Modulator with Low Half-Wave-voltage Length Product

High Efficiency Single-Sideband Modulator Using Coupled Bragg Grating Resonators on Thin-Film Lithium Niobate

Polarization-Insensitive Electrooptic Modulation on Anisotropic Thin-Film Lithium Niobate

High Performance Thin-film Lithium Niobate Modulator Applied ITO Composite Electrode with Modulation Efficiency of 1V*cm

Lithium Niobate Electro-Optic Modulation Device without an Overlay Layer Based on Bound States in the Continuum

120 GHz Sub-2 V Thin-Film Lithium Niobate Modulators on Silicon Substrate Using Thick Capacitively Loaded Slow Wave Electrodes

Thin Film Lithium Niobate Electro-optic Modulator Based on a Slow Wave Structure

Monolithic Thin Film Lithium Niobate Electro-Optic Modulator with over 110 GHz Bandwidth

Low half-wave-voltage, ultra-high bandwidth thin-film LiNbO3 modulator based on hybrid waveguide and periodic capacitively loaded electrodes

Visible Lithium Niobate Integrated Modulators for Classical and Quantum Technologies

Breaking voltage-bandwidth limits in integrated lithium niobate modulators using micro-structured electrodes

Micro-transfer-printed Thin film lithium niobate (TFLN)-on-Silicon Ring Modulator