Abstract:Single-crystal silicon (c-Si) is a vital component of photonic devices and has obvious advantages. Moreover, femtosecond-pulsed laser interactions with matter have been widely applied in micro/nanoscale processing. In this paper, we report the modification mechanisms of c-Si induced by a femtosecond laser (350 fs, 520 nm) at different pulse fluences, along with the mechanism of this technique to trim the phase error of c-Si-based devices. In this study, several distinct types of final micro/nanostructures, such as amorphization and ablation, were analyzed. The near-surface morphology was characterized using optical microscopy, scanning electron microscopy, and atomic force microscopy. The main physical modification processes were further analyzed using a two-temperature model. By employing Raman spectroscopy, we demonstrated that a higher laser fluence significantly contributes to the formation of more amorphous silicon components. The thickness of the amorphous layer was almost uniform (approximately 30 nm) at different induced fluences, as determined using transmission electron microscopy. From the ellipsometry measurements, we demonstrated that the refractive index increases for amorphization while the ablation decreases. In addition, we investigated the ability of the femtosecond laser to modify the effective index of c-Si microring waveguides by either amorphization or ablation. Both blue and red shifts of resonance spectra were achieved in the microring devices, resulting in double-direction trimming. Our results provide further insight into the femtosecond laser modification mechanism of c-Si and may be a practical method for dealing with the fabrication errors of c-Si-based photonic devices.

Transverse Inscription of Silicon Waveguides by Picosecond Laser Pulses

Transverse Ultrafast Laser Inscription in Bulk Silicon

Transmission electron microscopy characterizations of local amorphization of single crystal silicon by nanosecond pulsed laser direct writing

Single-step fabrication of surface waveguides in fused silica with few-cycle laser pulses

Direct Writing of Channel Optical Waveguides in Er 3+ -Doped Aluminosilicate Glass by Low Repetition Rate Femtosecond Laser

Optical Signal Processing In Silicon Nano-Waveguides

Picosecond Pulse Laser Microstructuring of Silicon

Direct Writing of Sub-Wavelength Ripples on Silicon Using Femtosecond Laser at High Repetition Rate

Femtosecond laser micromachining of waveguides in silicone-based hydrogel polymers

Direct laser-writing of ferroelectric single-crystal waveguide architectures in glass for 3D integrated optics

Optical Sensitivity of Waveguides Inscribed in Nanoporous Silicate Framework

Photowritten Optical Waveguides in Various Glasses with Ultrashort Pulse Laser

3D Laser Writing of Low‐Loss Cross‐Section‐Variable Type‐I Optical Waveguide Passive/Active Integrated Devices in Single Crystals

Picosecond Pulse Raman Amplification and Controlled Time Delay in Silicon-on-insulator Waveguides

Fabrication of polarization-independent waveguides deeply buried in crystal using aberration-corrected femtosecond laser direct writing

Index Modulation Embedded in Type I Waveguide Written by Femtosecond Laser in Fused Silica

Single-scan Ultrafast Laser Inscription of Waveguides in IG2 for Type-I and Type-Ii Operation in the Mid-Infrared.

Modifying single-crystal silicon and trimming silicon microring devices by femtosecond laser irradiation

Direct Writing of Buried Waveguides in Hybrid Organic-Inorganic Sol-Gel by Femtosecond Laser Pulses

Sub-wavelength Ripple Formation on Silicon Induced by Femtosecond Laser Radiation

Femtosecond laser inscription of nonlinear photonic circuits in Gallium Lanthanum Sulphide glass