Abstract:Calcium oxide (CaO) is a promising host for quantum defects because of its ultrawide band gap and potential for long spin coherence times. Using hybrid functional calculations, we investigate the intrinsic point defects and how they limit Fermi-level positions and doping in CaO. Our results reveal calcium and oxygen vacancies to be the most common intrinsic defects, acting as compensating acceptors and donors, respectively. Oxygen interstitials are also prevailing under O-rich conditions and act as compensating donors. Due to compensation by these defects, O-poor conditions are required to dope CaO n-type, while O-rich conditions are required for p-type doping. We find that, at room temperature, intrinsic CaO can only achieve Fermi-level positions between 1.76 eV above the valence-band maximum (VBM) and 1.73 eV below the conduction-band minimum (CBM). If suitable shallow dopants can be found, the allowed range of Fermi levels would increase to between VBM+0.53 eV and CBM-0.27 eV and is set by the compensating intrinsic defects. Additionally, we study hydrogen impurities, and show that hydrogen will limit p-type doping but can also act as shallow donor when substituting oxygen ($\mathrm{H}_\mathrm{O}$ defects).

What problem does this paper attempt to address?

The problem this paper attempts to address is the intrinsic defects in calcium oxide (CaO) and their impact on doping limits. Specifically, the authors investigate how intrinsic point defects in CaO limit the Fermi level position and doping capability through first-principles hybrid functional calculations. The detailed content is as follows: 1. **Research Background**: - Calcium oxide (CaO) is considered a good host material for quantum defects due to its ultra-wide bandgap and potential for long spin coherence time. - However, controlling the Fermi level in wide bandgap materials is challenging because defect compensation effects can pin the Fermi level, limiting the stable existence of charged defects. 2. **Research Objectives**: - **Explore Intrinsic Defects**: Study the intrinsic point defects in CaO, including calcium vacancies (𝑉Ca), oxygen vacancies (𝑉O), calcium interstitials (Ca𝑖), oxygen interstitials (O𝑖), calcium substituting oxygen (CaO), and oxygen substituting calcium (OCa). - **Evaluate Doping Limits**: Assess the role of these intrinsic defects as charge compensation centers and how they limit the Fermi level position and doping capability. - **Impact of Hydrogen Impurities**: Investigate the behavior of hydrogen impurities in CaO, particularly their limiting effect on p-type doping and contribution as shallow donors to n-type doping. 3. **Main Findings**: - **Intrinsic Defects**: Calcium vacancies and oxygen vacancies are the most common intrinsic defects, acting as compensating acceptors and donors, respectively. Oxygen interstitials are also prevalent under oxygen-rich conditions, acting as compensating donors. - **Fermi Level Range**: At room temperature, intrinsic CaO can only achieve a Fermi level between 1.76 eV above the valence band maximum (VBM) and 1.73 eV below the conduction band minimum (CBM). If suitable shallow dopants are found, the allowable Fermi level range can be expanded to VBM +0.53 eV to CBM −0.27 eV. - **Doping Conditions**: Oxygen-poor conditions are required to achieve n-type doping, while oxygen-rich conditions are suitable for p-type doping. - **Hydrogen Impurities**: Hydrogen impurities limit p-type doping, but when hydrogen substitutes for oxygen (HO defect), it can act as a shallow donor to facilitate n-type doping. Through these studies, the authors provide an important theoretical foundation for understanding defect behavior in CaO and its impact on doping capability, which helps guide future experimental work.

First-principles study of defects and doping limits in CaO

First-principles study of defects and doping limits in CaO

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