Abstract:Positron Annihilation Technique is very sensitive to vacancy defects and small vacancy clusters and has been used as supplementary for TEM in radiation damage research. In this paper, we evaluated the displacement damage in solids induced by positrons and its effect on defects measurement, which has not been considered carefully in most PAT application. Displacement damage could only be produced when kinetic energy of positron exceeds a threshold determined by average displacement energy and the mass of atoms. Based on the latest models of displacement damage and numerical Mott elastic differential cross section of positrons interacting with atoms, displacement cross section for fast positron in solids was calculated and compared with that for electrons. In the energy range from 1MeV to 100MeV, electrons will produce more displacement defects than positrons do, especially in high-Z materials. Number of total defects depends on the primary displacement cross section and the size of damage cascades. To get distributions of defects and terminating position of positrons in materials, a Monte Carlo tool with full damage model was developed and validated. From the results of Monte Carlo modeling, the defects -generated by mono-energy positron beam have shallower distribution than the stopping position of positrons, indicating separation of defects and positrons and this fact benefits defects measurement because displacement damage produced by fast probing positron beam have little affection on the measurement. But for the positron beams from radioactive sources (such as 22Na and 64Cu) with continuous energy spectrum (from 0 to Emax), the depth profile of defects and terminated position of positrons overlap with each other and this fact indicated that defects measurement in materials will be affected by extra defects produced by positrons. The density of defects produced by positron beam is quite low with a typical value of about 0.01∼0.1 cm-3 per positron in low-Z materials, which could be comparable with the defect density limitation if enough accumulated positrons are implanted into materials during measurement. For commonly used structural metals (such as Fe, Mn, Cu and metals with Z number higher than 40), using positron from 22N and 64Cu directly to measure defects density is quite safe because the energy is smaller than the displacement threshold.

Positron lifetime calculations for defects in Zn

Positron Lifetime Calculation for Possible Defects in Nanocrystalline Copper

Defect Characterization in Thermoelectric Zn-Sb Systems by Positron Annihilation

Thermal stability of grain boundaries in nanocrystalline Zn studied by positron lifetime spectroscopy

Electronic Structures of Defects in Zno: Hybrid Density Functional Studies

Dependence of Intrinsic Defects in Zno Films on Oxygen Fraction Studied by Positron Annihilation

Positron Lifetime Calculation for Plastic Deformed Nanocrystalline Copper

Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations

The Correlation Between Dislocations and Vacancy Defects Using Positron Annihilation Spectroscopy

Zn vacancy as a polaronic hole trap in ZnO

The Role of Defect Charge, Crystal Chemistry, and Crystal Structure on Positron Lifetimes of Vacancies in Oxides

Energetics of intrinsic point defects in ZrSiO$_4$

Evolution of Native Point Defects in ZnO Bulk Probed by Positron Annihilation Spectroscopy

Quantum Monte Carlo Study of Correlation Energy and Pair Correlation Function at Various Electron-Positron Density Ratios: Accurate Calculation of Positron Annihilation Lifetimes in Solids

Anisotropic Li diffusion in pristine and defective ZnO

Evaluation of displacement damage in solids induced by fast positrons: Modeling and effect on vacancy measurement

Investigation and Calculation of Positron Lifetimes of Mono-Vacancies in Crystals

Plastic Deformation of Nanocrystalline Zinc Investigated by Positron Annihilation Lifetime Spectroscopy

Transient positron annihilation spectroscopy under light irradiation at liquid nitrogen temperature: evaluation of defect states in single-crystal ZnO

Electronic structure of defects and doping in ZnO: Oxygen vacancy and nitrogen doping

Positron Annihilation Study of the Mg-Zn -Y Alloys with Long Period Stacking Ordered (LPSO) Structures