Ferromagnetic Semiconductors and Spintronic Devices

Nazmul Hasan

2024-01-31

Abstract:Ferromagnetic semiconductors play a crucial role in spintronic devices, enabling effective control of electron spin over charge. This study explores their unique properties, ongoing advancements in spin control, and potential integration into next-generation semiconductor technologies.

Applied Physics,Materials Science

What problem does this paper attempt to address?

Ferrimagnets for spintronic devices: From materials to applications

Yue Zhang,Xueqiang Feng,Zhenyi Zheng,Zhizhong Zhang,Kelian Lin,Xiaohan Sun,Guanda Wang,Jinkai Wang,Jiaqi Wei,Pierre Vallobra,Yu He,Zixi Wang,Lei Chen,Kun Zhang,Yong Xu,Weisheng Zhao

DOI: https://doi.org/10.1063/5.0104618

IF: 15

2023-03-02

Applied Physics Reviews

Abstract:Spintronic devices use spin instead of charge to process information and are widely considered as promising candidates for next-generation electronic devices. In past decades, the main motivation in spintronics has been to discover new mechanisms and novel material systems to improve both device performance and the application prospects of spintronics. Recently, researchers have found that ferrimagnetic materials—in which sublattices are coupled antiferromagnetically—offer an emerging platform for realizing high-density, high-speed, and low-power-consumption memory and logic functions. Within such a ferrimagnetic class, vanishing magnetization and ultrafast magnetic dynamics can be achieved by adjusting chemical composition and temperature, among other parameters. Meanwhile, unlike for antiferromagnets, conventional electrical read–write methods remain suitable for ferrimagnets, which is beneficial for applications. In this review, an abundant class of ferrimagnets including oxides and alloys is surveyed, and unique magnetic dynamics and effective methods for manipulating the magnetic states of ferrimagnets are discussed. Finally, novel storage and computing devices based on ferrimagnets are considered, as there are some challenges to be addressed in future applications of ferrimagnets.

physics, applied
Why ferromagnetic semiconductors?

Tomasz Dietl

DOI: https://doi.org/10.48550/arXiv.cond-mat/0201279

2002-01-16

Abstract:Rapid development of information technologies originates from the exponential increase in the density of information that can be processed, stored, and transfer by the unit area of relevant devices. There is, however, a growing amount of evidences that the progress achieved in this way approaches its limits. Various novel ideas put forward to circumvent barriers ahead are described. Particular attention is paid to those concepts which propose to exploit electron or nuclear spins as the information carriers. Here, ferromagnetic semiconductors of III-V or II-VI compounds containing a sizable concentration of transition metals appear as outstanding spintronic materials.

Materials Science,Strongly Correlated Electrons
How to make semiconductors ferromagnetic: A first course on spintronics

S. Das Sarma,E. H. Hwang,A. Kaminski

DOI: https://doi.org/10.1016/S0038-1098%2803%2900337-5

2003-04-10

Abstract:The rapidly developing field of ferromagnetism in diluted magnetic semiconductors, where a semiconductor host is magnetically doped by transition metal impurities to produce a ferromagnetic semiconductor (e.g. Ga_{1-x}Mn_xAs with x ~ 1-10 %), is discussed with the emphasis on elucidating the physical mechanisms underlying the magnetic properties. Recent key developments are summarized with critical discussions of the roles of disorder, localization, band structure, defects, and the choice of materials in producing good magnetic quality and high Curie temperature. The correlation between magnetic and transport properties is argued to be a crucial ingredient in developing a full understanding of the properties of ferromagnetic semiconductors.

Materials Science
Electric-Field-Controlled Antiferromagnetic Spintronic Devices

Han Yan,Zexin Feng,Peixin Qin,Xiaorong Zhou,Huixin Guo,Xiaoning Wang,Hongyu Chen,Xin Zhang,Haojiang Wu,Chengbao Jiang,Zhiqi Liu

DOI: https://doi.org/10.1002/adma.201905603

2021-08-10

Abstract:In recent years, the field of antiferromagnetic spintronics has been substantially advanced. Electric-field control is a promising approach to achieving ultra-low power spintronic devices via suppressing Joule heating. In this article, cutting-edge research, including electric-field modulation of antiferromagnetic spintronic devices using strain, ionic liquids, dielectric materials, and electrochemical ionic migration, are comprehensively reviewed. Various emergent topics such as the Neel spin-orbit torque, chiral spintronics, topological antiferromagnetic spintronics, anisotropic magnetoresistance, memory devices, two-dimensional magnetism, and magneto-ionic modulation with respect to antiferromagnets are examined. In conclusion, we envision the possibility of realizing high-quality room-temperature antiferromagnetic tunnel junctions, antiferromagnetic spin logic devices, and artificial antiferromagnetic neurons. It is expected that this work provides an appropriate and forward-looking perspective that will promote the rapid development of this field.

Mesoscale and Nanoscale Physics,Materials Science,Applied Physics
From Nanoelectronics to Nano-Spintronics.

Kang L. Wang,Igor Ovchinnikov,Faxian Xiu,Alex Khitun,Ming Bao

DOI: https://doi.org/10.1166/jnn.2011.3155

2011-01-01

Journal of Nanoscience and Nanotechnology

Abstract:Today's electronics uses electron charge as a state variable for logic and computing operation, which is often represented as voltage or current. In this representation of state variable, carriers in electronic devices behave independently even to a few and single electron cases. As the scaling continues to reduce the physical feature size and to increase the functional throughput, two most outstanding limitations and major challenges, among others, are power dissipation and variability as identified by ITRS. This paper presents the expose, in that collective phenomena, e.g., spintronics using appropriate order parameters of magnetic moment as a state variable may be considered favorably for a new room-temperature information processing paradigm. A comparison between electronics and spintronics in terms of variability, quantum and thermal fluctuations will be presented. It shows that the benefits of the scalability to smaller sizes in the case of spintronics (nanomagnetics) include a much reduced variability problem as compared with today's electronics. In addition, another advantage of using nanomagnets is the possibility of constructing nonvolatile logics, which allow for immense power savings during system standby. However, most of devices with magnetic moment usually use current to drive the devices and consequently, power dissipation is a major issue. We will discuss approaches of using electric-field control of ferromagnetism in dilute magnetic semiconductor (DMS) and metallic ferromagnetic materials. With the DMSs, carrier-mediated transition from paramagnetic to ferromagnetic phases make possible to have devices work very much like field effect transistor, plus the non-volatility afforded by ferromagnetism. Then we will describe new possibilities of the use of electric field for metallic materials and devices: Spin wave devices with multiferroics materials. We will also further describe a potential new method of electric field control of metallic ferromagnetism via field effect of the Thomas Fermi surface layer.
Lecture Notes on Semiconductor Spintronics

Tomasz Dietl

DOI: https://doi.org/10.48550/arXiv.0801.0145

2007-12-30

Materials Science

Abstract:These informal lecture notes describe the progress in semiconductor spintronics in a historic perspective as well as in a comparison to achievements of spintronics of ferromagnetic metals. After outlining motivations behind spintronic research, selected results of investigations on three groups of materials are presented. These include non-magnetic semiconductors, hybrid structures involving semiconductors and ferromagnetic metals, and diluted magnetic semiconductors either in paramagnetic or ferromagnetic phase. Particular attention is paid to the hole-controlled ferromagnetic systems whose thermodynamic, micromagnetic, transport, and optical properties are described in detail together with relevant theoretical models.
Spin-Dependent Transport at 2D Solids: from Nonmagnetic Layers to Ferromagnetic Van Der Waals Structures.

Yang Liu,Yuqiao Guo,Changzheng Wu,Yi Xie

DOI: https://doi.org/10.1021/acs.jpclett.1c02047

2021-01-01

Abstract:Spintronics is a promising alternative to the conventional silicon transistor-based electronics that are gradually approaching their physical limitations. Ultrathin two-dimensional van der Waals (vdW) materials (2D materials) with controllable spin degrees of freedom are recognized as extremely promising spintronic materials in architectures for the post-Moore era. In this Perspective, we review recent progress on spin-dependent transport behaviors (SDTBs) confined at the 2D scale, which are the mainstream paradigms for spintronic devices. We first present the mechanism and the key factors of SDTBs in 2D nonmagnetic materials-based hybrid devices. Then, some chemical modulation strategies for inducing short-range magnetic order and magneto-electric performance into 2D nonmagnetic materials are discussed. Furthermore, we concentrate on introducing intriguing SDTBs in 2D long-range ferromagnetic materials-based vdW devices. Finally, we highlight the current challenges in the study of spin-dependent transport of 2D modified materials and 2D material-based spintronic devices, in the hope of accelerating their applications.
Emerging two-dimensional ferromagnetic semiconductors

Denan Kong,Chunli Zhu,Chunyu Zhao,Jijian Liu,Ping Wang,Xiangwei Huang,Shoujun Zheng,Dezhi Zheng,Ruibin Liu,Jiadong Zhou

DOI: https://doi.org/10.1039/d4cs00378k

IF: 46.2

2024-10-16

Chemical Society Reviews

Abstract:Two-dimensional (2D) semiconductors have attracted considerable attention for their potential in extending Moore's law and advancing next-generation electronic devices. Notably, the discovery and development of 2D ferromagnetic semiconductors (FMSs) open exciting opportunities in manipulating both charge and spin, enabling the exploration of exotic properties and the design of innovative spintronic devices. In this review, we aim to offer a comprehensive summary of emerging 2D FMSs, covering their atomic structures, physical properties, preparation methods, growth mechanisms, magnetism modulation techniques, and potential applications. We begin with a brief introduction of the atomic structures and magnetic properties of novel 2D FMSs. Next, we delve into the latest advancements in the exotic physical properties of 2D FMSs. Following that, we summarize the growth methods, associated growth mechanisms, magnetism modulation techniques and spintronic applications of 2D FMSs. Finally, we offer insights into the challenges and potential applications of 2D FMSs, which may inspire further research in developing high-density, non-volatile storage devices based on 2D FMSs.

chemistry, multidisciplinary
Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai

DOI: https://doi.org/10.1063/1.484013

2013-11-26

Abstract:Spin-based electronics or spintronics is an emerging field, in which we try to utilize spin degrees of freedom as well as charge transport in materials and devices. While metal-based spin-devices, such as magnetic-field sensors and magnetoresistive random access memory using giant magnetoresistance and tunneling magnetoresistance, are already put to practical use, semiconductor-based spintronics has greater potential for expansion because of good compatibility with existing semiconductor technology. Many semiconductor-based spintronics devices with useful functionalities have been proposed and explored so far. To realize those devices and functionalities, we definitely need appropriate materials which have both the properties of semiconductors and ferromagnets. Ferromagnetic semiconductors (FMS), which are alloy semiconductors containing magnetic atoms such as Mn and Fe, are one of the most promising classes of materials for this purpose, and thus have been intensively studied for the past two decades. Here, we review the recent progress in the studies of the most prototypical III-V based FMS, p-type (GaMn)As, and its heterostructures with focus on tunneling transport, Fermi level, and bandstructure. Furthermore, we cover the properties of a new n-type FMS, (InFe)As, which shows electron-induced ferromagnetism. These FMS materials having zinc-blende crystal structure show excellent compatibility with well-developed III-V heterostructures and devices.

Mesoscale and Nanoscale Physics,Materials Science
Wide band gap ferromagnetic semiconductors and oxides

S. J. Pearton,C. R. Abernathy,M. E. Overberg,G. T. Thaler,D. P. Norton,N. Theodoropoulou,A. F. Hebard,Y. D. Park,F. Ren,J. Kim,L. A. Boatner

DOI: https://doi.org/10.1063/1.1517164

IF: 2.877

2003-01-01

Journal of Applied Physics

Abstract:Recent advances in the theory and experimental realization of ferromagnetic semiconductors give hope that a new generation of microelectronic devices based on the spin degree of freedom of the electron can be developed. This review focuses primarily on promising candidate materials (such as GaN, GaP and ZnO) in which there is already a technology base and a fairly good understanding of the basic electrical and optical properties. The introduction of Mn into these and other materials under the right conditions is found to produce ferromagnetism near or above room temperature. There are a number of other potential dopant ions that could be employed (such as Fe, Ni, Co, Cr) as suggested by theory [see, for example, Sato and Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2 39, L555 (2000)]. Growth of these ferromagnetic materials by thin film techniques, such as molecular beam epitaxy or pulsed laser deposition, provides excellent control of the dopant concentration and the ability to grow single-phase layers. The mechanism for the observed magnetic behavior is complex and appears to depend on a number of factors, including Mn–Mn spacing, and carrier density and type. For example, in a simple Ruderman–Kittel–Kasuya–Yosida carrier-mediated exchange mechanism, the free-carrier/Mn ion interaction can be either ferromagnetic or antiferromagnetic depending on the separation of the Mn ions. Potential applications for ferromagnetic semiconductors and oxides include electrically controlled magnetic sensors and actuators, high-density ultralow-power memory and logic, spin-polarized light emitters for optical encoding, advanced optical switches and modulators and devices with integrated magnetic, electronic and optical functionality.

physics, applied
Spin and Ferroelectric Devices

Qiming Shao,Guoqiang Yu,Lei Pan,Xiaoyu Che,Yabin Fan,Koichi Murata,Qing-Lin He,Tianxiao Nie,Xufeng Kou,Kang L. Wang,S. Slesazeck,T. Mikolajick,Matthew Jerry,Jeffrey A. Smith,Kai Ni,Atanu Saha,Sumeet Gupta,Suman Datta

DOI: https://doi.org/10.1109/drc.2018.8442173

2018-01-01

Abstract:Spin and Ferroelectric Devices
Perspectives on Antiferromagnetic Spintronics

Kang Wang,Vineetha Bheemarasetty,Junhang Duan,Shiyu Zhou,Gang Xiao

DOI: https://doi.org/10.48550/arXiv.2209.15187

2022-11-03

Abstract:Although the development of spintronic devices has advanced significantly over the past decade with the use of ferromagnetic materials, the extensive implementation of such devices has been limited by the notable drawbacks of these materials. Antiferromagnets claim to resolve many of these shortcomings leading to faster, smaller, more energy-efficient, and more robust electronics. Antiferromagnets exhibit many desirable properties including zero net magnetization, imperviousness to external magnetic fields, intrinsic high-frequency dynamics with a characteristic precession frequency on the order of terahertz (THz), and the ability to serve as passive exchange-bias materials in multiple magnetoresistance (MR)- based devices. In this Perspective article, we will discuss the fundamental physics of magnetic structures in antiferromagnets and their interactions with external stimuli such as spin current, voltage, and magnons. A discussion on the challenges lying ahead is also provided along with an outlook of future research directions of these systems.

Materials Science,Mesoscale and Nanoscale Physics,Applied Physics
Electron and spin transport in semiconductor and magnetoresistive devices

Viktor Sverdlov,Siegfried Selberherr

DOI: https://doi.org/10.1016/j.sse.2024.108962

IF: 1.916

2024-05-26

Solid-State Electronics

Abstract:As the scaling of CMOS-based technology shows signs of an imminent saturation, employing the second intrinsic electron characteristics – the electron spin – is attractive to further boost the performance of integrated circuits and to introduce new computational paradigms. The spin promises to offer an additional functionality to charge-based CMOS circuitry. Spin injection and spin manipulation by gate-induced electrics field at room temperatures were successfully demonstrated in semiconductor channels, expectations that such spin-driven devices appear in digital circuits to complement or even replace CMOS become credible. On the memory side, the nonvolatile CMOS-compatible spin-transfer torque (STT) and the spin–orbit torque magnetoresistive random access memories (MRAMs) are already competing with flash memory and even SRAM for embedded applications. To accurately model spin and charge transport and torques in magnetic tunnel junctions, we innovatively extend the spin and charge transport equations to multi-layered structures consisting of normal and ferromagnetic metal layers separated by tunnel barriers. We validate our approach by modeling the magnetization dynamics in ultra-scaled MRAM cells. A multi-bit operation is predicted in an MRAM cell with a composite free layer.

physics, condensed matter, applied,engineering, electrical & electronic
Prospects for Antiferromagnetic Spintronic Devices

Pedram Khalili Amiri,Charudatta Phatak,Giovanni Finocchio

DOI: https://doi.org/10.1146/annurev-matsci-080222-030535

IF: 9.7

2024-04-25

Annual Review of Materials Research

Abstract:This article examines recent advances in the field of antiferromagnetic spintronics from the perspective of potential device realization and applications. We discuss advances in the electrical control of antiferromagnetic order by current-induced spin–orbit torques, particularly in antiferromagnetic thin films interfaced with heavy metals. We also review possible scenarios for using voltage-controlled magnetic anisotropy as a more efficient mechanism to control antiferromagnetic order in thin films with perpendicular magnetic anisotropy. Next, we discuss the problem of electrical detection (i.e., readout) of antiferromagnetic order and highlight recent experimental advances in realizing anomalous Hall and tunneling magnetoresistance effects in thin films and tunnel junctions, respectively, which are based on noncollinear antiferromagnets. Understanding the domain structure and dynamics of antiferromagnetic materials is essential for engineering their properties for applications. For this reason, we then provide an overview of imaging techniques as well as micromagnetic simulation approaches for antiferromagnets. Finally, we present a perspective on potential applications of antiferromagnets for magnetic memory devices, terahertz sources, and detectors.

materials science, multidisciplinary
Two-dimensional magnetic materials for spintronic applications

Shivam N. Kajale,Jad Hanna,Kyuho Jang,Deblina Sarkar

DOI: https://doi.org/10.1007/s12274-024-6447-2

IF: 9.9

2024-01-25

Nano Research

Abstract:Spintronic devices are driving new paradigms of bio-inspired, energy efficient computation like neuromorphic stochastic computing and in-memory computing. They have also emerged as key candidates for non-volatile memories for embedded systems as well as alternatives to persistent memories. To meet the growing demands from such diverse applications, there is need for innovation in materials and device designs which can be scaled and adapted according to the application. Two-dimensional (2D) magnetic materials address challenges facing bulk magnet systems by offering scalability while maintaining device integrity and allowing efficient control of magnetism. In this review, we highlight the progress made in experimental studies on 2D magnetic materials towards their integration into spintronic devices. We provide an account of the various relevant material discoveries, demonstrations of current and voltage-based control of magnetism and reported device systems, while also discussing the challenges and opportunities towards integration of 2D magnetic materials in commercial spintronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Exotic rare earth-based materials for emerging spintronic technology

Sachin Gupta

DOI: https://doi.org/10.1016/bs.hpcre.2023.04.001

2023-10-05

Abstract:The progress in materials science has always been associated with the development of functional materials systems, which enables us to design proof-of-concept devices. To advance further, theoretical predictions of new novel materials and their experimental realization is very important. This chapter reviews the intriguing properties of rare earth-based materials and their applications in spintronics. Spintronics is an emerging technology, which exploits spin degree of freedom of an electron along with its charge property. Discovery of various physical phenomena and their industrial applications in the field of magnetic sensors, magnetic recording and non-volatile memories such as magnetic random access memory (MRAM) and spin-transfer torque (STT) MRAM opens several new directions in this field. Materials with large spin polarization, strong spin-orbit coupling, and tunable electronic and magnetic properties offer an excellent platform for the spintronics technology. Combination of rare earths with other elements such as transition metals show broad range of structural, electronic, and magnetic properties which make them excellent candidates for various spintronic applications. This chapter discusses many such materials ranging from Heusler alloys, topological insulators to two-dimensional ferromagnets and their potential applications. The review gives an insight of how rare-earth materials can play a key role in emerging future technology and have great potential in many new spintronic related applications.

Materials Science,Mesoscale and Nanoscale Physics
Nanostructures, Magnetic Semiconductors and Spinelectronics

P. Kervalishvili

DOI: https://doi.org/10.48550/arXiv.0708.1445

2007-08-10

Materials Science

Abstract:A short overview is given of recent advances in the field of nanosemiconductors, which are suitable as materials for spin polarized transport of charge carriers. On the basis of last theoretical and experimental achievements it is shown that development of diluted and wide forbidden zone semiconductors with controlled disorders as well as their molecular structures is the very prospective way for magnetic semiconductors preparation.
Control of Spin on Ferromagnetism and Thermoelectric Properties of Sr(V/Cr)2S4; Emergent Spintronic Aspirant

Ghazanfar Nazir,Q. Mahmood,Taharh Zelai,Adeela Rehman,Hind Albalawi,Nessrin A Kattan,S. Bouzgarrou,Imed Boukhris

DOI: https://doi.org/10.1088/1402-4896/ad3c7d

2024-04-10

Physica Scripta

Abstract:Strontium-based spinel chalcogenides show great potential in energy harvesting and spintronics applications. This study extensively examines the electronic, ferromagnetic, and thermoelectric characteristics of SrZ2S4 (Z = V, Cr) spinels. Stability of the cubic phase in a ferromagnetic state is confirmed through formation energy and the energy released upon optimization. Spin polarization and Curie temperature were assessed using density of states (DOSs) analysis and the Heisenberg model, respectively. The investigation of ferromagnetism encompassed exchange energies, the double exchange mechanism, exchange constants, and hybridization processes. The observed reduction in magnetic moment for V/Cr and its redistribution to nonmagnetic (Sr, S) sites suggest that ferromagnetism stems from electron exchange, not from clustering of V/Cr atoms. Furthermore, the study delves into thermoelectric properties, including electrical and thermal conductivities, the Seebeck coefficient (S), and power factor, highlighting their significance for energy applications. The findings reveal ultralow thermal conductivity values, which minimize thermal effects on electron spin, thereby enhancing device longevity. Collectively, these insights underscore the critical role of electron exchange in ferromagnetism and its implications for energy device performance.

physics, multidisciplinary
Study of the spin-polarized electronic, exchange constant, and thermoelectric characteristics of spinels LiFe 2 (O/S) 4 for spintronic and energy-harvesting applications

Sadia Nazir,N.A. Noor,Ramesh Sharma,M. Imran Rasheed,M. Ammar Yasir,Muhammad Aslam,Yousef Mohammed Alanazi

DOI: https://doi.org/10.1016/j.jpcs.2024.111975

IF: 4.383

2024-02-29

Journal of Physics and Chemistry of Solids

Abstract:Spintronics is a rapidly developing field in advanced technology. It focuses on manipulating the spin of electrons to achieve high-speed data transfer, handling, and storage in order to enhance its capabilities. We conducted a systematic investigation of the ferromagnetism, electronic, and thermoelectric characteristics of spinel compounds LiFe 2 (O/S) 4 . Our analysis for optimization demonstrates that ferromagnetic states exhibit great energy release compared to the antiferromagnetic states, indicating the presence of ferromagnetic behavior in the studied compounds. To evaluate the presence of ferromagnetism above room temperature, we employ the Heisenberg model to calculate the Curie temperature and spin polarization to evaluate the presence of ferromagnetism above room temperature. Additionally, a concise overview of the nature of ferromagnetism, including band structures, density of states, exchange energies and constants, hybridization double exchange model, and crystal-field energy, is provided in this research. The absorption of a shift in magnetic moment from Fe to the Li and O/S sites suggests that the ferromagnetic behavior is primarily due to the spin of electrons. Furthermore, we explore the impact of the thermal parameters on the electro-spin as well as the thermoelectric characteristics for both spin-down and spin-up states, providing insights into the energy-harvesting potential.

physics, condensed matter,chemistry, multidisciplinary
Coherent antiferromagnetic spintronics

Jiahao Han,Ran Cheng,Luqiao Liu,Hideo Ohno,Shunsuke Fukami

DOI: https://doi.org/10.1038/s41563-023-01492-6

IF: 41.2

2023-03-21

Nature Materials

Abstract:Antiferromagnets have attracted extensive interest as a material platform in spintronics. So far, antiferromagnet-enabled spin–orbitronics, spin-transfer electronics and spin caloritronics have formed the bases of antiferromagnetic spintronics. Spin transport and manipulation based on coherent antiferromagnetic dynamics have recently emerged, pushing the developing field of antiferromagnetic spintronics towards a new stage distinguished by the features of spin coherence. In this Review, we categorize and analyse the critical effects that harness the coherence of antiferromagnets for spintronic applications, including spin pumping from monochromatic antiferromagnetic magnons, spin transmission via phase-correlated antiferromagnetic magnons, electrically induced spin rotation and ultrafast spin–orbit effects in antiferromagnets. We also discuss future opportunities in research and applications stimulated by the principles, materials and phenomena of coherent antiferromagnetic spintronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter

Ferromagnetic Semiconductors and Spintronic Devices

Ferrimagnets for spintronic devices: From materials to applications

Why ferromagnetic semiconductors?

How to make semiconductors ferromagnetic: A first course on spintronics

Electric-Field-Controlled Antiferromagnetic Spintronic Devices

From Nanoelectronics to Nano-Spintronics.

Lecture Notes on Semiconductor Spintronics

Spin-Dependent Transport at 2D Solids: from Nonmagnetic Layers to Ferromagnetic Van Der Waals Structures.

Emerging two-dimensional ferromagnetic semiconductors

Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

Wide band gap ferromagnetic semiconductors and oxides

Spin and Ferroelectric Devices

Perspectives on Antiferromagnetic Spintronics

Electron and spin transport in semiconductor and magnetoresistive devices

Prospects for Antiferromagnetic Spintronic Devices

Two-dimensional magnetic materials for spintronic applications

Exotic rare earth-based materials for emerging spintronic technology

Nanostructures, Magnetic Semiconductors and Spinelectronics

Control of Spin on Ferromagnetism and Thermoelectric Properties of Sr(V/Cr)2S4; Emergent Spintronic Aspirant

Study of the spin-polarized electronic, exchange constant, and thermoelectric characteristics of spinels LiFe 2 (O/S) 4 for spintronic and energy-harvesting applications

Coherent antiferromagnetic spintronics