Spin and Ferroelectric Devices

Qiming Shao,Guoqiang Yu,Lei Pan,Xiaoyu Che,Yabin Fan,Koichi Murata,Qing-Lin He,Tianxiao Nie,Xufeng Kou,Kang L. Wang,S. Slesazeck,T. Mikolajick,Matthew Jerry,Jeffrey A. Smith,Kai Ni,Atanu Saha,Sumeet Gupta,Suman Datta

DOI: https://doi.org/10.1109/drc.2018.8442173

2018-01-01

Abstract:Spin and Ferroelectric Devices

What problem does this paper attempt to address?

Organic Spin-Valves: Physics and Applications

ZV Vardeny,ZH Xiong,D Wu,F Wang,J Shi

DOI: https://doi.org/10.1063/1.2103926

2005-01-01

AIP Conference Proceedings

Abstract:Spin-valve devices of organic semiconductors in the vertical configuration using a variety of exotic and regular ferromagnetic electrodes were fabricated and studied as a function of applied magnetic field, temperature and applied bias voltage. These devices show that spin polarized carriers can be injected from ferromagnetic electrodes into organic semiconductors and diffuse without loss of spin polarization for distances of the order of 100 run at low temperatures.
Development in Application of Ferroelectric Thin Films

徐文彬,王德苗,董树荣

DOI: https://doi.org/10.3321/j.issn:1005-023X.2004.10.021

2004-01-01

Abstract:This paper briefly reviews the typical application of ferroelectric thin films in the domains of ferroelectric memory, MEMS, microwave devices and optical devices. Besides, it briefly discusses the research and development of the ferroelectric thin films in China.
Ferrimagnets for spintronic devices: From materials to applications

Yue Zhang,Xueqiang Feng,Zhenyi Zheng,Zhizhong Zhang,Kelian Lin,Xiaohan Sun,Guanda Wang,Jinkai Wang,Jiaqi Wei,Pierre Vallobra,Yu He,Zixi Wang,Lei Chen,Kun Zhang,Yong Xu,Weisheng Zhao

DOI: https://doi.org/10.1063/5.0104618

IF: 15

2023-03-02

Applied Physics Reviews

Abstract:Spintronic devices use spin instead of charge to process information and are widely considered as promising candidates for next-generation electronic devices. In past decades, the main motivation in spintronics has been to discover new mechanisms and novel material systems to improve both device performance and the application prospects of spintronics. Recently, researchers have found that ferrimagnetic materials—in which sublattices are coupled antiferromagnetically—offer an emerging platform for realizing high-density, high-speed, and low-power-consumption memory and logic functions. Within such a ferrimagnetic class, vanishing magnetization and ultrafast magnetic dynamics can be achieved by adjusting chemical composition and temperature, among other parameters. Meanwhile, unlike for antiferromagnets, conventional electrical read–write methods remain suitable for ferrimagnets, which is beneficial for applications. In this review, an abundant class of ferrimagnets including oxides and alloys is surveyed, and unique magnetic dynamics and effective methods for manipulating the magnetic states of ferrimagnets are discussed. Finally, novel storage and computing devices based on ferrimagnets are considered, as there are some challenges to be addressed in future applications of ferrimagnets.

physics, applied
Ferroelectric Control of Spin‐Orbitronics

Youdi Gu,Zhenyi Zheng,Lanxin Jia,Shu Shi,Tieyang Zhao,Tao Zeng,Qihan Zhang,Yao Zhu,Han Wang,Jingsheng Chen

DOI: https://doi.org/10.1002/adfm.202406444

IF: 19

2024-06-21

Advanced Functional Materials

Abstract:This review summarizes cutting‐edge research on emerging ferroelectric control of spin‐orbitronics (FECSO) in various material systems by means of spontaneous polarization, reversible ferroelectric switching, and multiferroic coupling. Two fascinating topics of topological spin texture and spin‐charge interconversion are carefully discussed. It aptly classifies the primary control mechanisms of FECSO and also provides clear future perspectives. Spin‐orbit coupling refers to the relativistic interaction between the spin and orbital motions of electrons. This interaction leads to numerous intriguing phenomena, including spin‐orbit torques, spin–momentum locking, topological spin textures, etc., that have recently gained prominence in the field of spin‐orbitronics. In particular, the emerging ferroelectric control is recognized and validated as an effective means to enhance energy efficiency across a broad spectrum of spin‐orbitronic devices. Here, cutting‐edge research on ferroelectric control of spin‐orbitronics (FECSO) by means of spontaneous polarization, reversible ferroelectric switching, and multiferroic coupling, are comprehensively reviewed. Two fascinating topics are mainly discussed: topological spin texture and spin‐charge interconversion. The classification of control mechanisms for different interactions in FECSO is summarized first. Then, from the perspective of material classification, the ferroelectric‐controlled spin‐orbit coupling with tunable topological spin texture in oxide systems, magnetic metal multilayers, and 2D van der Waals materials is reviewed. Subsequently, the ferroelectric‐tunable spin‐charge interconversion on heavy metal layers, oxide interfaces, and ferroelectric Rashba semiconductors is highlighted. In the end, the challenges and forthcoming prospects of FECSO are discussed. This work may provide pertinent and forward‐thinking guidance to accelerate the ongoing advancement of this field.

materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied,chemistry, physical, condensed matter
Novel forms of energy in ferroelectric , antiferroelectric , antiferrodistortive , magnetic and multiferroic materials

L. Bellaiche,S. Bhattacharjee,X. M. Chen,H. Fu,Z. Gui,J. Íñiguez,I. Kornev,Anruo Mao,A. Raeliarijaona,W. Ren,S. Singh,M. Viret,R. Walter,D. Wang,Y. Yang,H. Zhao

2014-01-01

Abstract:Physics Department, University of Arkansas, Fayetteville, Arkansas 72701, USA Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra (Barcelona), Spain Laboratoire Structures, Proprietes et Modelisation des Solides, Ecole Centrale Paris, CNRSUMR8580, Grande Voie des Vignes, 92295 Chatenay-Malabry Cedex, France Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China Department of Physics, Shanghai University, 99 Shanghai Road, Shanghai 200444, China Service de Physique de l'Etat Condense, CEA Saclay, DSM/IRAMIS/SPEC, URA CNRS 2464, 91191 Gif-Sur-Yvette Cedex, France Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China
A Novel Ferroelectric Rashba Semiconductor

Gauthier Krizman,Tetiana Zakusylo,Lakshmi Sajeev,Mahdi Hajlaoui,Takuya Takashiro,Marcin Rosmus,Natalia Olszowska,Jacek J. Kolodziej,Guenther Bauer,Ondrej Caha,Gunther Springholz

DOI: https://doi.org/10.1002/adma.202310278

2023-10-19

Abstract:Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization. Yet, only very few materials have been established to belong to this class of multifunctional materials. Here, Pb1-xGexTe is unraveled as a novel FERSC system down to nanoscale. The ferroelectric phase transition and concomitant lattice distortion is demonstrated by temperature dependent X-ray diffraction, and its effect on electronic properties are measured by angle-resolved photoemission spectroscopy. In few nanometer-thick epitaxial heterostructures, a large Rashba spin-splitting is exhibiting a wide tuning range as a function of temperature and Ge content. Our work defines Pb1- xGexTe as a high-potential FERSC system for spintronic applications.

Materials Science,Mesoscale and Nanoscale Physics,Other Condensed Matter
Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures

Shanquan Chen,Shuai Yuan,Zhipeng Hou,Yunlong Tang,Jinping Zhang,Tao Wang,Kang Li,Weiwei Zhao,Xingjun Liu,Lang Chen,Lane W. Martin,Zuhuang Chen

DOI: https://doi.org/10.1002/adma.202000857

IF: 29.4

2020-08-19

Advanced Materials

Abstract:Topological spin/polarization structures in ferroic materials continue to draw great attention as a result of their fascinating physical behaviors and promising applications in the field of high‐density nonvolatile memories as well as future energy‐efficient nanoelectronic and spintronic devices. Such developments have been made, in part, based on recent advances in theoretical calculations, the synthesis of high‐quality thin films, and the characterization of their emergent phenomena and exotic phases. Herein, progress over the last decade in the study of topological structures in ferroic thin films and heterostructures is explored, including the observation of topological structures and control of their structures and emergent physical phenomena through epitaxial strain, layer thickness, electric, magnetic fields, etc. First, the evolution of topological spin structures (e.g., magnetic skyrmions) and associated functionalities (e.g., topological Hall effect) in magnetic thin films and heterostructures is discussed. Then, the exotic polar topologies (e.g., domain walls, closure domains, polar vortices, bubble domains, and polar skyrmions) and their emergent physical properties in ferroelectric oxide films and heterostructures are explored. Finally, a brief overview and prospectus of how the field may evolve in the coming years is provided.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Manipulating chiral-spin transport with ferroelectric polarization

Xiaoxi Huang,Xianzhe Chen,Yuhang Li,John Mangeri,Hongrui Zhang,Maya Ramesh,Hossein Taghinejad,Peter Meisenheimer,Lucas Caretta,Sandhya Susarla,Rakshit Jain,Christoph Klewe,Tianye Wang,Rui Chen,Cheng-Hsiang Hsu,Hao Pan,Jia Yin,Padraic Shafer,Ziqiang Qiu,Davi R. Rodrigues,Olle Heinonen,Dilip Vasudevan,Jorge Iniguez,Darrell G. Schlom,Sayeef Salahuddin,Lane W. Martin,James G. Analytis,Daniel C. Ralph,Ran Cheng,Zhi Yao,Ramamoorthy Ramesh

2023-06-04

Abstract:A collective excitation of the spin structure in a magnetic insulator can transmit spin-angular momentum with negligible dissipation. This quantum of a spin wave, introduced more than nine decades ago, has always been manipulated through magnetic dipoles, (i.e., timereversal symmetry). Here, we report the experimental observation of chiral-spin transport in multiferroic BiFeO3, where the spin transport is controlled by reversing the ferroelectric polarization (i.e., spatial inversion symmetry). The ferroelectrically controlled magnons produce an unprecedented ratio of up to 18% rectification at room temperature. The spin torque that the magnons in BiFeO3 carry can be used to efficiently switch the magnetization of adja-cent magnets, with a spin-torque efficiency being comparable to the spin Hall effect in heavy metals. Utilizing such a controllable magnon generation and transmission in BiFeO3, an alloxide, energy-scalable logic is demonstrated composed of spin-orbit injection, detection, and magnetoelectric control. This observation opens a new chapter of multiferroic magnons and paves an alternative pathway towards low-dissipation nanoelectronics.

Applied Physics
Progress in Ferroelectric Materials

Liu Zhi-Guo

2012-01-01

Abstract:Ferroelectric materials,one of the current research focuses with numbers of physical advantages such as high integration,low energy consumption and fast response,has broad application prospects in many aspects.Being combined with other physical technologies,the properties of ferroelectric materials can be significantly improved.The development history and prevailing research profile of ferroelectric materials were introduced at first,then the performance characteristics in detail,including five mechanisms:(1) piezoelectric and its application in micro-electromechanical systems;(2) dielectric materials used for energy storage;(3)organic ferroelectric thin films;(4) multiferroic which has two or more primary iron characteristics;(5) ferroelectric resistance switching.In addition,some unresolved technical issues of ferroelectric materials were summarized and the developing trends were prospected.
Inherent Spin–Polarization Coupling in a Magnetoelectric Vortex

Sujit Das,Valentyn Laguta,Katherine Inzani,Weichuan Huang,Junjie Liu,Ruchira Chatterjee,Margaret R. McCarter,Sandhya Susarla,Arzhang Ardavan,Javier Junquera,Sinéad M. Griffin,Ramamoorthy Ramesh,Sinéad M. Griffin

DOI: https://doi.org/10.1021/acs.nanolett.2c00496

IF: 10.8

2022-05-13

Nano Letters

Abstract:Solid-state materials are currently being explored as a platform for the manipulation of spins for spintronics and quantum information science. More broadly, a wide spectrum of ferroelectric materials, spanning from inorganic oxides to polymeric systems such as PVDF, present a different approach to explore quantum phenomena in which the spins are set and manipulated with electric fields. Using dilute Fe3+-doped ferroelectric PbTiO3-SrTiO3 superlattices as a model system, we demonstrate intrinsic spin-polarization control of spin directionality in complex ferroelectric vortices and skyrmions. Electron paramagnetic resonance (EPR) spectra show that the spins in the Fe3+ ion are strongly coupled to the local polarization and preferentially aligned perpendicular to the ferroelectric polar c axis in this complex vortex structure. The effect of polarization-spin directionality is corroborated by first-principles calculations, demonstrating the variation of the spin directionality with the polar texture and offering the potential for future quantum analogues of macroscopic magnetoelectric devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Spin-Driven Ferroelectricity in Two-Dimensional Magnetic Heterostructures

Huiping Li,Wenguang Zhu

DOI: https://doi.org/10.1021/acs.nanolett.3c04030

IF: 10.8

2023-01-01

Nano Letters

Abstract:Achieving magnetic control of ferroelectricity or electric control of magnetism is usually challenging in material systems as their magnetism and ferroelectricity have distinct fundamental origins and are subject to different symmetry constraints. However, such control has significant promise for a wide range of device applications. In this work, we employ first-principles density functional theory calculations to demonstrate the emergence of spin-driven ferroelectricity in a vertically stacked two-dimensional (2D) van der Waals magnetic heterostructure, formed by two ferromagnetic (FM) CrBr3 layers separated by an antiferromagnetic (AFM) MnPSe3 layer, delicately designed to be structurally inversion symmetric but magnetically asymmetric. The spin-induced out-of-plane electric polarization of the entire heterostructure can be reversibly controlled by an external magnetic field. We further validate the effectiveness of this design strategy in several other lattice-matched FM/AFM/FM heterostructures, thereby providing a novel family of multiferroic systems based on 2D materials.
Recent Progress on Two-Dimensional Ferroelectrics: Material Systems and Device Applications

Zhiwei Fan,Jingyuan Qu,Tao Wang,Yan Wen,Ziwen An,Qitao Jiang,Wuhong Xue,Peng Zhou,Xiaohong Xu

DOI: https://doi.org/10.1088/1674-1056/ad08a4

2023-01-01

Abstract:Ferroelectrics are a type of material with a polar structure and their polarization direction can be inverted reversibly by applying an electric field. They have attracted tremendous attention for their extensive applications in non-volatile memory, sensors and neuromorphic computing. However, conventional ferroelectric materials face insulating and interfacial issues in the commercialization process. In contrast, two-dimensional (2D) ferroelectric materials usually have excellent semiconductor performance, clean van der Waals interfaces and robust ferroelectric order in atom-thick layers, and hold greater promise for constructing multifunctional ferroelectric optoelectronic devices and nondestructive ultra-high-density memory. Recently, 2D ferroelectrics have obtained impressive breakthroughs, showing overwhelming superiority. Herein, firstly, the progress of experimental research on 2D ferroelectric materials is reviewed. Then, the preparation of 2D ferroelectric devices and their applications are discussed. Finally, the future development trend of 2D ferroelectrics is looked at.
From Nanoelectronics to Nano-Spintronics.

Kang L. Wang,Igor Ovchinnikov,Faxian Xiu,Alex Khitun,Ming Bao

DOI: https://doi.org/10.1166/jnn.2011.3155

2011-01-01

Journal of Nanoscience and Nanotechnology

Abstract:Today's electronics uses electron charge as a state variable for logic and computing operation, which is often represented as voltage or current. In this representation of state variable, carriers in electronic devices behave independently even to a few and single electron cases. As the scaling continues to reduce the physical feature size and to increase the functional throughput, two most outstanding limitations and major challenges, among others, are power dissipation and variability as identified by ITRS. This paper presents the expose, in that collective phenomena, e.g., spintronics using appropriate order parameters of magnetic moment as a state variable may be considered favorably for a new room-temperature information processing paradigm. A comparison between electronics and spintronics in terms of variability, quantum and thermal fluctuations will be presented. It shows that the benefits of the scalability to smaller sizes in the case of spintronics (nanomagnetics) include a much reduced variability problem as compared with today's electronics. In addition, another advantage of using nanomagnets is the possibility of constructing nonvolatile logics, which allow for immense power savings during system standby. However, most of devices with magnetic moment usually use current to drive the devices and consequently, power dissipation is a major issue. We will discuss approaches of using electric-field control of ferromagnetism in dilute magnetic semiconductor (DMS) and metallic ferromagnetic materials. With the DMSs, carrier-mediated transition from paramagnetic to ferromagnetic phases make possible to have devices work very much like field effect transistor, plus the non-volatility afforded by ferromagnetism. Then we will describe new possibilities of the use of electric field for metallic materials and devices: Spin wave devices with multiferroics materials. We will also further describe a potential new method of electric field control of metallic ferromagnetism via field effect of the Thomas Fermi surface layer.
2D ferroelectric devices: working principles and research progress.

M. Liu,T. Liao,Ziqi Sun,Yuantong T. Gu,Liangzhi Kou

DOI: https://doi.org/10.1039/d1cp02788c

2021-10-06

Abstract:Two-dimensional (2D) ferroelectric materials are promising for use in high-performance nanoelectronic devices due to the non-volatility, high storage density, low energy cost and short response time originating from their bistable and switchable polarization states. In this mini review, we first discuss the mechanism and operation principles of ferroelectric devices to facilitate understanding of these novel nanoelectronics and then summarize the latest research progress of electronic devices based on 2D ferroelectrics. Finally, the perspectives for future research and development directions in various fields are provided. We expect this will provide an overview regarding the application of 2D ferroelectrics in electronic appliances.

Physics,Engineering,Medicine,Materials Science
Recent Advances in Tunable Spin–orbit Coupling Using Ferroelectricity

Mei Fang,Wenchao Zhang,Xiaoyu Wu,Wang Guo,Huayan Xia,Yutai Wang,Wenbin Wang,Jian Shen

DOI: https://doi.org/10.1063/5.0052553

IF: 6.6351

2021-01-01

APL Materials

Abstract:Spin–orbit coupling (SOC), describing the interaction of the spin and orbital motion of electrons with a variety of emergent phenomena, has driven significant research activity over the past decade. Here, we review the fundamental principles of SOC and its related physical effects on magnetism and spin–charge interconversion. A special emphasis is made on ferroelectricity controlled SOC with tunable spin-torque effects and spin–charge interconversions for potential applications in future scalable, non-volatile, and low power consumption information processing devices.
Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure

Jiawei Wang,Aitian Chen,Peisen Li,Sen Zhang

DOI: https://doi.org/10.3390/ma14164623

IF: 3.4

2021-08-17

Materials

Abstract:Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn1/3Nb2/3O3)1−x-(PbTiO3)x] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Thin-Film Ferroelectrics

Abel Fernandez,Megha Acharya,Han-Gyeol Lee,Jesse Schimpf,Yizhe Jiang,Djamila Lou,Zishen Tian,Lane W Martin

DOI: https://doi.org/10.1002/adma.202108841

Abstract:Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro-, meso-, and macroscopic length scales. This review traces the evolution of ferroelectric thin-film research through the early days developing understanding of the roles of size and strain on ferroelectrics to the present day, where such understanding is used to create complex hierarchical domain structures, novel polar topologies, and controlled chemical and defect profiles. The extension of epitaxial techniques, coupled with advances in high-throughput simulations, now stands to accelerate the discovery and study of new ferroelectric materials. Coming hand-in-hand with these new materials is new understanding and control of ferroelectric functionalities. Today, researchers are actively working to apply these lessons in a number of applications, including novel memory and logic architectures, as well as a host of energy conversion devices.
Ferromagnetic Semiconductors and Spintronic Devices

Nazmul Hasan

2024-01-31

Abstract:Ferromagnetic semiconductors play a crucial role in spintronic devices, enabling effective control of electron spin over charge. This study explores their unique properties, ongoing advancements in spin control, and potential integration into next-generation semiconductor technologies.

Applied Physics,Materials Science
The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

Qing Liu,Silin Cui,Renji Bian,Er Pan,Guiming Cao,Wenwu Li,Fucai Liu

DOI: https://doi.org/10.1021/acsnano.3c05711

IF: 17.1

2024-01-01

ACS Nano

Abstract:In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.
Voltage Tuning of Ferromagnetic Resonance and Linewidth in Spinel Ferrite/Ferroelectric Multiferroic Heterostructures

Mingmin Zhu,Tianxiang Nan,Ming Liu,Wei Ren,Ziyao Zhou,Nian X. Sun

DOI: https://doi.org/10.1109/lmag.2015.2425360

IF: 1.5201

2015-01-01

IEEE Magnetics Letters

Abstract:An energy efficient approach is demonstrated to remarkably shift the ferromagnetic resonance (FMR) field by applying an electric field to various spinel ferrite/ferroelectric multiferroic heterostructures prepared by the low temperature spin-spray technique. The electric field-induced magnetic anisotropy changes, as well as the magnetoelectric (ME) coupling coefficient, were quantitatively determined in all multiferroic heterostructures. The broadness of FMR linewidth upon applying an electric field indicates that inhomogeneous ME coupling takes place, which arises from the ferrroelastic domain switching and polarization elongation. These results provide a framework for realizing compact, light-weight, and ultralow power electronics and microwave devices.

Spin and Ferroelectric Devices

Organic Spin-Valves: Physics and Applications

Development in Application of Ferroelectric Thin Films

Ferrimagnets for spintronic devices: From materials to applications

Ferroelectric Control of Spin‐Orbitronics

Novel forms of energy in ferroelectric , antiferroelectric , antiferrodistortive , magnetic and multiferroic materials

A Novel Ferroelectric Rashba Semiconductor

Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures

Manipulating chiral-spin transport with ferroelectric polarization

Progress in Ferroelectric Materials

Inherent Spin–Polarization Coupling in a Magnetoelectric Vortex

Spin-Driven Ferroelectricity in Two-Dimensional Magnetic Heterostructures

Recent Progress on Two-Dimensional Ferroelectrics: Material Systems and Device Applications

From Nanoelectronics to Nano-Spintronics.

2D ferroelectric devices: working principles and research progress.

Recent Advances in Tunable Spin–orbit Coupling Using Ferroelectricity

Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure

Thin-Film Ferroelectrics

Ferromagnetic Semiconductors and Spintronic Devices

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

Voltage Tuning of Ferromagnetic Resonance and Linewidth in Spinel Ferrite/Ferroelectric Multiferroic Heterostructures