Abstract:In the present paper, p-CdS/n-Si heterojunction solar cells are prepared for the first time by the spray pyrolysis technique. Using such low-cost method, cells with 6.4% AMI conversion efficiency and 0.32 fill factor have been made. The forward current of the prepared cells is dominated by the tunneling-recombination mechanism. Spectral response measurements revealed that these cells exhibit a wide spectral response (400-II50 nm) with two distinct peaks, the first at A-=550nm, while the second at A-=800nm. Photo-induced open-circuit voltage decay technique illustrated that the minority carriers lifetime of these cells is around 20!JS. Introduction There has been considerable interest in recent years directed towards the development of heterojunction solar cells [I-3]. Such interest is based on the fact that heterojunction devices have a number of advantages over diffused p-n junction solar cells include [4]: (i) a lower junctionformation temperature, (ii) higher spectral response at short wavelengths, and (iii) many of deposited layers have the right indices of refraction to act as antireflection coating. CdS/Si and Indoped CdS/Si heterojunction solar cells have been reported to have power conversion efficiencies of 4% and greater [5-8]. The CdS films in these devices are deposited by different methods. Most of these films are deposited by either evaporation or sputtering in a vacuum and post-deposition heat treatments are necessary. However, no attempt is reported for depositing CdS onto Si by chemical spray pyrolysis technique yet. In this letter, we report the preliminary results of the first fabrication of p-CdS/n-Si heterojunction solar cells made by chemical spray pyrolysis technique. Preliminary aspects of this work have been reported earlier [9,IO]. Experimental Procedures Single-crystal silicon wafers of n-type with (lli) orientation are used as substrates, they have a resistivity in the range of I-5 D-cm, and one face ofthe wafer is polished to the mirror-like surface. Prior to deposition of CdS, the wafers were chemically etched in dilute hydrofluoric acid to remove native oxides. Then back contact metallization was accomplished by vacuum depositing 200 nm layer of Al. Subsequently, after removal from the vacuum chamber, the wafers were scribed into individual pieces of 0.5cm sizes, then they were sent to spraying apparatus. The deposition of CdS films was carried out by spraying an aqueous solution of CdCh and thiourea onto a heated silicon substrate maintained at 450° C. A typical spray mixture, which gave us good results, consists of an 0.2 M solution of cadmium salt and 0.2 M solution of thiourea. This solution is sprayed in a deposition rate of about 2nm/s. After the deposition of CdS, frontal metal electrode is a 200nm layer of Al through a metal mask. The sensitive area was about 0.2cm. The optical transmittance of the CdS thin films prepared on glass substrates was measured using (UVNIS-PV-8800) spectrophotometer covering the range 400-900 nm. Spectral responsivity measurements of CdS/Si heterojunction solar cells were made by using a monochromator (MODEL 746) in the range 400IIOO nm (the spectrum of interest in the operation of solar cells under terrestrial applications). The results were calibrated by measuring the power of each spectral line using a standard power meter. (J-V) measurements were done under dark and illuminated conditions. The illumination was achieved under simulated AMI condition (93 mW/cm) by a halogen lamp type "PHILIPS"; I20 W, which connected to a Variac and calibrated by a silicon powermeter. The type of conductivity of CdS film was determined by using Hall measurement. The minority carrier lifetime of the cells was

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