Abstract:The discovery of ferroelectricity in the fluorite-structure HfO2 has attracted much interest in various applications including electro-optic devices and nonvolatile memories. Doping and alloying not only induce the ferroelectricity in HfO2, but also significantly impact the thermal conduction which plays an essential role in the heat dissipation and thermal stability of ferroelectric devices. To understand and regulate the heat transfer in ferroelectric HfO2, it is crucial to investigate the thermal conduction properties of related fluorite-structure ferroelectrics so as to establish the structure-property relation. In this work, using first-principles calculations, we investigate the thermal transport in twelve fluorite-structure ferroelectrics. We find an overall satisfactory agreement between the calculated thermal conductivities and those predicted by the simple theory of Slack. Among the family of fluorite-structure ferroelectrics, the transition-metal oxides HfO2 and ZrO2 have the highest thermal conductivities due to the strong interatomic bonding. We demonstrate that the spontaneous polarization, a feature specific to ferroelectrics, is positively correlated with the thermal conductivity, namely, the larger the spontaneous polarization, the larger the thermal conductivity. This is of chemical origin, namely both the spontaneous polarization and the thermal conductivity are positively correlated to the "ionicity" of the ferroelectrics. We further find that the thermal conductivity is several times lower in ferroelectric solid solution Hf1-xZrxO2 than its pure counterparts, especially in the thin films where the finite size effect further suppresses thermal conduction. Our findings suggest the spontaneous polarization as a specific criterion for identifying ferroelectrics with desired thermal conductivities, which may promote the designs and applications of ferroelectrics.

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Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Ultralarge polarization in ferroelectric hafnia-based thin films

Robust Ferroelectricity in HfO2-based Bulk Crystals Via Polymorphic Engineering

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

Emergent ferroelectricity in subnanometer binary oxide films on silicon

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Anomalous polarization-switching phenomena and noteworthy pyroelectricity in ferroelectric Hf0.5Zr0.5O2 polycrystalline films

Ferroelectricity in Hafnia: The Origin of Nanoscale Stabilization

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Ultralow Operating Voltage for Energy Conversion Performance in Hf1–xZrxO2 Thin Films

Improved Ferroelectricity and Tunneling Electro Resistance in Zr-Rich HfxZr1-xO2 Ferroelectric Tunnel Junction

Observing Ferroelastic switching in Hf 0.5 Zr 0.5 O 2 Thin Film

First-principles study of thermal transport properties in ferroelectric HfO2 and related fluorite-structure ferroelectrics

Direct observation of charge density and electronic polarization in fluorite ferroelectrics by 4D-STEM

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

Kinetically-stabilized Ferroelectricity in Bulk Singlecrystalline HfO2:Y without Wake-up Effects

Engineering Hf 0.5 Zr 0.5 O 2 Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants

Origin of Interstitial Doping Induced Coercive Field Reduction in Ferroelectric Hafnia

Engineering ferroelectricity in monoclinic hafnia