Engineering of Chern number of topological bands in bilayer graphene by in-plane magnetic field and electrical bias

Narjes Kheirabadi
2024-05-17
Abstract:Based on the full Hamiltonian of bilayer graphene, phase transitions are realized by the change of the in-plane magnetic field and the electrical bias in bilayer graphene. We show that the engineering of Chern numbers of four bands is possible by an applied in-plane magnetic field and an electrical bias in bilayer graphene. Our results are promising for the exploration of new topological phenomena in 2D materials.
Mesoscale and Nanoscale Physics
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