Engineering the Band Topology in a Rhombohedral Trilayer Graphene Moiré Superlattice.

Xiangyan Han,Qianling Liu,Yijie Wang,Ruirui Niu,Zhuangzhuang Qu,Zhiyu Wang,Zhuoxian Li,Chunrui Han,Kenji Watanabe,Takashi Taniguchi,Zhida Song,Jianpeng Liu,Jinhai Mao,Zheng Han,Bheema Lingam Chittari,Jeil Jung,Zizhao Gan,Jianming Lu

DOI: https://doi.org/10.1021/acs.nanolett.4c00948

IF: 10.8

2024-01-01

Nano Letters

Abstract:Moire superlattices have become a fertile playground for topological Chern insulators, where the displacement field can tune the quantum geometry and Chern number of the topological band. However, in experiments, displacement field engineering of spontaneous symmetry-breaking Chern bands has not been demonstrated. Here in a rhombohedral trilayer graphene moire superlattice, we use a thermodynamic probe and transport measurement to monitor the Chern number evolution as a function of the displacement field. At a quarter filling of the moire band, a novel Chern number of three is unveiled to compete with the well-established number of two upon turning on the electric field and survives when the displacement field is sufficiently strong. The transition can be reconciled by a nematic instability on the Fermi surface due to the pseudomagnetic vector field potentials associated with moire strain patterns. Our work opens more opportunities to active control of Chern numbers in van der Waals moire systems.