Abstract:Studies of two-dimensional electron systems in a strong magnetic field revealed the quantum Hall effect<a href="/articles/s41586-020-2049-7#ref-CR1">1</a>, a topological state of matter featuring a finite Chern number C and chiral edge states<a href="/articles/s41586-020-2049-7#ref-CR2">2</a>,<a href="/articles/s41586-020-2049-7#ref-CR3">3</a>. Haldane<a href="/articles/s41586-020-2049-7#ref-CR4">4</a> later theorized that Chern insulators with integer quantum Hall effects could appear in lattice models with complex hopping parameters even at zero magnetic field. The ABC-trilayer graphene/hexagonal boron nitride (ABC-TLG/hBN) moiré superlattice provides an attractive platform with which to explore Chern insulators because it features nearly flat moiré minibands with a valley-dependent, electrically tunable Chern number<a href="/articles/s41586-020-2049-7#ref-CR5">5</a>,<a href="/articles/s41586-020-2049-7#ref-CR6">6</a>. Here we report the experimental observation of a correlated Chern insulator in an ABC-TLG/hBN moiré superlattice. We show that reversing the direction of the applied vertical electric field switches the moiré minibands of ABC-TLG/hBN between zero and finite Chern numbers, as revealed by large changes in magneto-transport behaviour. For topological hole minibands tuned to have a finite Chern number, we focus on quarter filling, corresponding to one hole per moiré unit cell. The Hall resistance is well quantized at h/2e2 (where h is Planck's constant and e is the charge on the electron), which implies C = 2, for a magnetic field exceeding 0.4 tesla. The correlated Chern insulator is ferromagnetic, exhibiting substantial magnetic hysteresis and a large anomalous Hall signal at zero magnetic field. Our discovery of a C = 2 Chern insulator at zero magnetic field should open up opportunities for discovering correlated topological states, possibly with topological excitations<a href="/articles/s41586-020-2049-7#ref-CR7">7</a>, in nearly flat and topologically nontrivial moiré minibands.

Chern Insulator States with Tunable Chern Numbers in a Graphene Moiré Superlattice

Tunable Correlated Chern Insulator and Ferromagnetism in Trilayer Graphene/Boron Nitride Moiré Superlattice

Tunable correlated Chern insulator and ferromagnetism in a moiré superlattice

Integer and fractional Chern insulators in twisted bilayer MoTe2

Theory of fractional Chern insulator states in pentalayer graphene moiré superlattice

Gate-Tunable Fractional Chern Insulators in Twisted Double Bilayer Graphene

Engineering the Band Topology in a Rhombohedral Trilayer Graphene Moiré Superlattice.

Theory of Correlated Chern Insulators in Twisted Bilayer Graphene

Particle-Hole Duality, Emergent Fermi Liquids, and Fractional Chern Insulators in Moire Flatbands

Commensurate and Incommensurate Chern Insulators in Magic-angle Bilayer Graphene

Displacement field-controlled fractional Chern insulators and charge density waves in a graphene/hBN moiré superlattice

Tunable ferromagnetism at non-integer filling of a moir\'e superlattice.

Thermodynamic evidence of fractional Chern insulator in moiré MoTe2

Gate-Tunable Mott Insulator in Trilayer Graphene-Boron Nitride Moiré Superlattice

Isospin Polarized Chern Insulator State of C=4in Twisted Double Bilayer Graphene

Interplay of electronic crystals with integer and fractional Chern insulators in moiré pentalayer graphene

Fractional Chern insulators in moiré flat bands with high Chern numbers

Moiré Fractional Chern Insulators III: Hartree-Fock Phase Diagram, Magic Angle Regime for Chern Insulator States, the Role of the Moiré Potential and Goldstone Gaps in Rhombohedral Graphene Superlattices

Moiré Fractional Chern Insulators II: First-principles Calculations and Continuum Models of Rhombohedral Graphene Superlattices

Untwisting Moiré Physics: Almost Ideal Bands and Fractional Chern Insulators in Periodically Strained Monolayer Graphene