Abstract:We show that a superlattice potential can be employed to engineer topology in massive Dirac fermions in systems such as bilayer graphene, moiré graphene-boron nitride, and transition-metal dichalcogenide (TMD) monolayers and bilayers. We use symmetry analysis to analyze band inversions to determine the Chern number $\mathscr C$ for the valence band as a function of tunable potential parameters for a class of $C_4$ and $C_3$ symmetric potentials. We present a novel method to engineer Chern number $\mathscr{C}=2$ for the valence band and show that the applied potential at minimum must have a scalar together with a non-scalar periodic part. We discover that certain forms of the superlattice potential, which may be difficult to realize in naturally occurring moiré patterns, allow for the possibility of non-trivial topological transitions. These forms may be achievable using an external superlattice potential that can be created using contemporary experimental techniques. Our work paves the way to realize the quantum Spin Hall effect (QSHE), quantum anomalous Hall effect (QAHE), and even exotic non-Abelian anyons in the fractional quantum Hall effect (FQHE).

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is: **How to engineer and regulate the topological properties of Dirac fermion systems through superlattice potential, especially to achieve specific Chern numbers (Chern number) in bilayer graphene, moiré graphene - boron nitride and monolayer and bilayer materials of transition metal dichalcogenides (TMD), especially the regulation of Chern number $C = 2$.** Specifically, the paper mainly focuses on the following aspects: 1. **Introducing external superlattice potential**: The paper shows how to use the externally applied superlattice potential to regulate the topological properties in systems with massive Dirac fermions. These systems include bilayer graphene, moiré graphene - boron nitride and monolayer and bilayer materials of transition metal dichalcogenides (TMD). 2. **Analyzing band inversion and Chern number**: Through symmetry analysis of superlattice potentials with $C_4$ and $C_3$ symmetries, determine the variation of the valence - band Chern number $C$ with adjustable potential parameters. The research finds that in order to achieve a Chern number of $C = 2$, the applied potential must include both a scalar part and a non - scalar periodic part simultaneously. 3. **Achieving non - trivial topological transitions**: The paper proposes a new method that can achieve a Chern number of $C = 2$ in the valence band and shows that certain forms of superlattice potential can allow non - trivial topological transitions, which are difficult to achieve in naturally formed moiré patterns. 4. **Exploring quantum effects**: This work paves the way for realizing strange non - Abelian anyons in the quantum spin Hall effect (QSHE), the quantum anomalous Hall effect (QAHE) and the fractional quantum Hall effect (FQHE). 5. **Possibility of experimental realization**: The paper also discusses how to use current experimental techniques to realize these theoretical predictions, for example, by creating external superlattice potentials through methods such as LAO/STO interfaces, twisted hexagonal boron nitride (h - BN) substrates or dielectric superlattices. In summary, the core objective of this paper is to achieve precise control of topological phases in Dirac fermion systems through the design and regulation of external superlattice potentials, especially to achieve a valence band with a Chern number of $C = 2$, and to explore its potential applications in quantum effects.

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