Flat-band topology of magic angle graphene on a transition metal dichalcogenide

Tianle Wang,Nick Bultinck,Michael P. Zaletel

DOI: https://doi.org/10.1103/physrevb.102.235146

IF: 3.7

2020-12-22

Physical Review B

Abstract:We consider twisted bilayer graphene on a transition metal dichalcogenide substrate, where proximity-induced spin-orbit coupling significantly alters the eight flat bands which occur near the magic angle. The resulting band structure features a pair of extremely flat bands across most of the mini-Brillouin zone. Further details depend sensitively on the symmetries of the heterostructure; we find semiconducting band structures when all twofold rotations around the in-plane axis are broken, and semimetallic band structures otherwise. We calculate the Chern numbers of the different isolated bands, and identify the parameter regimes and filling factors where valley Chern insulators and topological insulators are realized. Interestingly, we find that for realistic values of the proximity-induced terms, it is possible to realize a topological insulator protected by time-reversal symmetry by doping two holes or two electrons per superlattice unit cell into the system.

physics, condensed matter, applied,materials science, multidisciplinary

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the influence of spin - orbit coupling (SOC) introduced by the proximity effect on the originally flat bands in twisted bilayer graphene (TBG) on a specific transition - metal dichalcogenide (TMD) substrate. Specifically, the paper focuses on the following points:

1. **Influence of spin - orbit coupling on flat bands**: The paper studies how the significant spin - orbit coupling introduced by the TMD substrate changes the eight flat bands in twisted bilayer graphene. These flat bands appear near the magic angle and have a very small bandwidth. Spin - orbit coupling will lead to the reconstruction of these flat bands, thus affecting their topological properties.

2. **Band - structure of different heterostructures**: The paper analyzes in detail the changes in the band - structure under different symmetry conditions. For example, when the two - fold rotational symmetry of all in - plane axes is broken, the system exhibits semiconductor characteristics; in other cases, it exhibits semi - metallic characteristics.

3. **Realization of topological insulators**: By calculating the Chern numbers of different isolated bands, the paper identifies that under specific parameter ranges and filling factors, valley - Chern insulators and topological insulators protected by time - reversal symmetry can be realized. In particular, for the actual proximity - effect parameter values, a topological insulator protected by time - reversal symmetry can be realized by doping two holes or two electrons per supercell into the system.

4. **Symmetry analysis**: The paper also explores the role of different symmetries (such as time - reversal symmetry \(T\), three - fold rotational symmetry \(C_{3z}\) around the out - of - plane \(z\) - axis, two - fold rotational symmetry \(C_{2z}\) around the \(z\) - axis, and two - fold rotational symmetry \(C'_{2x}\) around the in - plane \(x\) - axis) in explaining the differences in the band - structures of different heterostructures. In particular, the \(C'_{2x}\) symmetry plays a key role in explaining the differences in the band - structure.

In summary, this paper aims to deeply understand the changes in the band - structure and topological properties of twisted bilayer graphene on a TMD substrate and explore the possibility of realizing different topological phases.