Abstract:The non-linear generalization of the Hall effect has recently gained much attention, with a rapidly growing list of non-centrosymmetric materials that display higher-order Hall responses under time-reversal invariant conditions. The intrinsic second-order Hall response arises due to the first-order moment of Berry curvature -- termed Berry curvature dipole -- which requires broken inversion and low crystal symmetries. Chiral materials are characterized by their lack of improper symmetries such as inversion, mirror plane, and roto-inversion. Owing to this absence of symmetries, in this work, we propose chiral systems as ideal platforms to study the Berry curvature dipole-induced non-linear Hall effects. We use state-of-the-art first-principles computations, in conjunction with symmetry analyses, to explore a variety of chiral material classes -- metallic \ch{NbSi2}, semiconducting elemental Te, insulating HgS, and topological multifold semimetal CoSi. We present the emergence and tunability of the Berry curvature dipole in these chiral materials. In particular, we demonstrate that the two enantiomeric pairs exhibit an exactly opposite sign of the Berry curvature dipole. We complement our \textit{ab initio} findings with a general tight-binding minimal model and give estimates for non-linear Hall voltages, which are experimentally accessible. Our predictions put forward chiral materials as an emerging class of materials to realize non-linear Hall phenomena and highlight an as-yet-unexplored aspect of these systems.

Berry Curvature Dipole and its Strain Engineering in Layered Phosphorene

Controlling quantum spin Hall state via strain in various stacking bilayer phosphorene

Electrically switchable giant Berry curvature dipole in silicene, germanene and stanene

Strain-Induced Gap Transition and Anisotropic Dirac-Like Cones in Monolayer and Bilayer Phosphorene

Strain-engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus.

Strain Tunable Berry Curvature Dipole, Orbital Magnetization and Nonlinear Hall Effect in WSe2 Monolayer

Strain-Engineered Nonlinear Hall Effect in HgTe

Strain Tunable Berry Curvature Dipole, Orbital Magnetization and Nonlinear Hall Effect in WSe 2 Monolayer

Strain and Curvature Induced Evolution of Electronic Band Structures in Twisted Graphene Bilayer

Strain-induced Enhanced Interlayer Coupling, Landau Quantizations, and Valley Polarization in Twisted Graphene Bilayer

Zero-magnetic-field Hall effects in artificially corrugated bilayer graphene

Manipulating Berry curvature of SrRuO3 thin films via epitaxial strain

Layer Pseudospin Dynamics and Genuine Non-Abelian Berry Phase in Inhomogeneously Strained Moiré Pattern

Strain-controlled thermoelectric properties of phosphorene hetero-bilayers

Enhanced Berry Curvature Dipole and Persistent Spin Texture in the Bi(110) Monolayer

Intrinsic Nonlinear Hall Effect and Gate-Switchable Berry Curvature Sliding in Twisted Bilayer Graphene

Berry Curvature Dipole in Bilayer Graphene with Interlayer Sliding

Strain engineering the charged-impurity-limited carrier mobility in phosphorene

Layer Coherence Origin of Intrinsic Planar Hall Effect in 2D Limit

Strain-Tunable Van Der Waals Interactions In Few-Layer Black Phosphorus

Chirality-tunable non-linear Hall effect