Abstract:The tunnel current (TC) and valley current (VC) are crucial in realizing high-speed and energy-saving in next-generation devices. This paper presents the TC and VC link in the partially overlapped graphene. Under the vertical electric field, the two graphene layers have the opposite AB sublattice symmetry, followed by a block on the intravalley transmission. In the allowed intervalley transmission, the difference in the phase of the decay factor prefers only one of the valleys in the output according to the overlapped length. These results suggest that the band gap with no edge state is a new platform of valleytronics.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: in the partially overlapped graphene (po - G) structure, how to regulate the tunneling current (Tunnel Current, TC) and valley current (Valley Current, VC) through the vertical electric field to achieve high - efficiency, high - speed, and energy - saving devices. Specifically, the author studied how, when the AB sub - lattice symmetries between the two graphene layers are opposite under the action of the vertical electric field, it affects the inter - valley transport, and explored how to use this effect to design new valleytronics devices.
### Core problems of the paper
1. **Relationship between tunneling current and valley current**:
- Tunneling current (TC) and valley current (VC) are the key factors for realizing next - generation high - speed and energy - saving devices. This paper focuses on exploring the relationship between TC and VC in the partially overlapped graphene structure.
2. **Role of the vertical electric field**:
- Under the action of the vertical electric field, the two graphene layers have opposite AB sub - lattice symmetries, which leads to the blockage of intra - valley transport. In the allowed inter - valley transport, the difference in the phase of the attenuation factor makes the output only biased towards a specific valley, which depends on the overlap length.
3. **Design of valley current filter (VCF)**:
- The author proposed a tunneling valley current filter (TC - VCF) based on partially overlapped graphene. This filter can achieve the selective transmission of valley current through the regulation of the vertical electric field without using a magnetic field. This finding provides a new platform for valleytronics.
### Formula representation
- **Landauer - Büttiker formula**:
\[
G=\frac{2e^{2}}{h}(T_{+}+T_{-})
\]
where \(T_{\pm}=\sum_{\nu'}T_{\pm,\nu'}\), and \(T_{\nu',\nu}\) is the transmission rate from the \(K_{\nu}\) valley to the \(K_{\nu'}\) valley.
- **Attenuation factor**:
\[
\lambda_{\sigma,l}=\mu_{\sigma,l}+\sqrt{\mu_{\sigma,l}^{2}-1}
\]
where:
\[
\mu_{\sigma,l}=-\frac{1 + l\sigma|E|}{2|\gamma_{0}|}
\]
- **Scattering matrix**:
\[
\begin{pmatrix}
\vec{\eta}_{+}\\
\vec{\eta}_{-}
\end{pmatrix}
=
\begin{pmatrix}
r_{\downarrow}&t_{\downarrow}\\
\tilde{t}_{\downarrow}&\tilde{r}_{\downarrow}
\end{pmatrix}
\begin{pmatrix}
\vec{\eta}_{-}\\
\vec{\eta}_{+}
\end{pmatrix}
\]
### Conclusion
Through the above research, the author shows that in the partially overlapped graphene, the vertical electric field can effectively regulate the tunneling current and valley current, thereby achieving an efficient valley current filter. This finding not only provides a new research direction for valleytronics but also may promote the development of future high - speed and energy - saving devices.