Abstract:Valleytronics, which makes use of the two valleys in graphenes, attracts considerable attention and a valley filter is expected to be the central component in valleytronics. We propose the application of the graphene valley filter using blister defects to the investigation of the valley-dependent transport properties of the Stone--Wales and blister defects of graphenes by density functional theory calculations. It is found that the intervalley transition from the $\mathbf{K}$ valley to the $\mathbf{K}^\prime$ valleys is completely suppressed in some defects. Using a large bipartite honeycomb cell including several carbon atoms in a cell and replacing atomic orbitals with molecular orbitals in the tight-binding model, we demonstrate analytically and numerically that the symmetry between the A and B sites of the bipartite honeycomb cell contributes to the suppression of the intervalley transition. In addition, the universal rule for the atomic structures of the blisters suppressing the intervalley transition is derived. Furthermore, by introducing additional carbon atoms to graphenes to form blister defects, we can split the energies of the states at which resonant scattering occurs on the $\mathrm{K}$ and $\mathrm{K}^\prime$ channel electrons. Because of this split, the fully valley-polarized current will be achieved by the local application of a gate voltage.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to use blister defects in graphene to achieve an effective valley filter to regulate the valley - polarized transport properties of electrons, thereby promoting the development of valleytronics. Specifically, through first - principles calculations, the authors studied the influence of Stone - Wales defects and blister defects in graphene on valley - dependent transport properties and proposed a valley - filter design scheme based on blister defects. ### Main problem decomposition: 1. **Suppression of inter - valley transitions**: In some defect structures, the inter - valley transitions from the K valley to the K' valley are completely suppressed. By introducing the large bipartite honeycomb cell (LBHC) and replacing atomic orbitals with molecular orbitals in the tight - binding model, the authors theoretically proved that this suppression phenomenon is related to the symmetry between the A and B sites. 2. **Proposal of a universal rule**: The authors proposed a universal rule for controlling the atomic structure in blister defects to suppress inter - valley transitions. This provides a theoretical basis for designing efficient valley filters. 3. **Energy splitting and valley - polarized current**: By adding extra carbon atoms to graphene to form blister defects, the energy of the resonant scattering states of electrons in the K and K' valleys can be split. This energy splitting enables a fully valley - polarized current to be achieved in the blister area by locally applying a gate voltage. ### Formula summary: - The approximate form of the tight - binding Hamiltonian near the K point: \[ \hat{H}(K + k)\approx\begin{pmatrix} u_A&\gamma_k e^{i\phi(k)}\\ \gamma_k e^{-i\phi(k)}&u_B \end{pmatrix} \] where $\gamma_k$ is the band parameter and $\phi(k)$ is the angle of the wave vector $k$. - The probability of valley - dependent transmission: \[ T_{KK'}=|t_{KK'}|^2 \] where $t_{KK'}$ is the transmission coefficient from the K valley to the K' valley. - Eigenvalues and eigenvectors: \[ \varepsilon_{Ks}=u\pm s\gamma k,\quad\phi_{Ks}=\frac{1}{\sqrt{2}}\begin{pmatrix} s\\ e^{i\phi(k)} \end{pmatrix} \] ### Conclusion: Through the above research, the authors successfully demonstrated how to use blister defects in graphene to achieve an efficient valley filter, which is of great significance for the practical application of valleytronics. In particular, by regulating the symmetry of the defect structure, inter - valley transitions can be effectively suppressed and a fully valley - polarized current can be achieved by locally applying a gate voltage.

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