Origins of Valley Current Reversal in Partially Overlapped Graphene Layers

Ryo Tamura

DOI: https://doi.org/10.7566/JPSJ.92.114706

2023-10-31

Abstract:Using the tight-binding model, we investigate the valley current of the `low-bi-up' and `low-bi-low' graphene junction, where `low' and `up' are respectively the lower and upper graphene layers extended from the central AB stacking bilayer graphene layer, `bi'. Source and drain electrodes connect with the left and right monolayer regions, respectively, and thus the total current is forced to flow through the interlayer path in the low-bi-up junction. We measure valley current reversal (VCR) using the average of $\frac{1}{2} \sum_{\nu =\pm}(T_{\nu,-\nu}-T_{\nu,\nu})$ per lateral wave number, where $T_{\nu,\nu'}$ denotes the electron transmission rate from the left $K_{\nu'}$ valley to the right $K_{\nu}$ valley. Without the vertical electric field, the VCR is less than half in both junctions. This VCR is attributed to monolayer--bilayer matching. As the vertical field intensifies, the VCR declines in the low-bi-low junction, but increases to about 0.8 in the low-bi-up junction. This VCR enhancement originates from interlayer matching. Analytic scattering matrixes elucidate these matching effects. Experiments of VCR detection are also proposed.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

### What problems does this paper attempt to solve?

This paper mainly explores the origin of Valley Current Reversal (VCR) in partially overlapped graphene layers. Specifically, the author studies the valley current characteristics in two types of graphene junctions, "low - bi - up" and "low - bi - low", through the tight - binding model. Here, "low" and "up" respectively represent the lower and upper graphene layers extending from the central AB - stacked bilayer graphene layer.

#### Main problems:
1. **Mechanism of Valley Current Reversal (VCR)**: The author attempts to explain the mechanism of the occurrence of the valley current reversal phenomenon under different conditions (such as the presence or absence of a vertical electric field).
2. **Influence of the vertical electric field**: Research the influence of the vertical electric field on the valley current reversal, especially how it enhances or suppresses VCR.
3. **Role of the matching effect**: Analyze the influence of monolayer - bilayer matching and interlayer matching on VCR, and clarify these matching effects by analyzing the scattering matrix.
4. **Possibility of experimental verification**: Propose some experimental schemes that can be used to detect the valley current reversal to verify the results of theoretical calculations.

#### Specific content:
- **Background introduction**: The paper first introduces graphene and its application prospects in valleytronics, especially the research significance of pure valley current.
- **Model and method**: Use the tight - binding model to describe the electron transport characteristics of the graphene junction and define the VCR index \(\tilde{g}_v\). When \(\tilde{g}_v\) reaches 1, it means that a perfect valley current reversal has been achieved.
- **Result analysis**: Through numerical simulation and analytical formula derivation, the author finds that:
- In the absence of a vertical electric field, the VCR in both junctions is less than 0.5, which is attributed to monolayer - bilayer matching.
- With the enhancement of the vertical electric field, the VCR in the "low - bi - low" junction decreases, while the VCR in the "low - bi - up" junction increases to about 0.8, which is due to the enhancement of interlayer matching.
- **Experimental suggestions**: Propose several experimental methods to detect the valley current reversal, including non - local resistance measurement, etc.

In general, this paper aims to deeply understand the physical mechanism of valley current reversal in partially overlapped graphene layers and provides a theoretical basis and guidance for future experimental verification.