Abstract:The existence of inequivalent valleys K and K' in the momentum space of two-dimensional hexagonal lattices provides a new electronic degree of freedom, the manipulation of which can potentially lead to new types of electronics, in analogy to the role played by electron spin. In materials with broken inversion symmetry, such as an electrically gated bilayer graphene, the momentum-space Berry curvature $\Omega$ carries opposite sign in the K and K' valleys. A sign reversal of $\Omega$ along an internal boundary of the sheet gives rise to counter-propagating one-dimensional conducting modes encoded with opposite valley indices. These metallic states are topologically protected against backscattering in the absence of valley-mixing scattering, and thus can carry current ballistically. In bilayer graphene, the reversal of $\Omega$ can occur at the domain wall of AB and BA stacked domains, or at the line junction of two oppositely gated regions. The latter approach can provide a scalable platform to implement valleytronic operations such as valves and waveguides, but is technically challenging to realize. Here we fabricate a dual-split-gate structure in bilayer graphene and demonstrate transport evidence of the predicted metallic states. They possess a mean free path of up to a few hundred nanometers in the absence of a magnet field. The application of perpendicular magnetic field suppresses backscattering significantly and enables a 400-nanometer-long junction to exhibit conductance close to the ballistic limit of 4 $e^2/h$ at 8 Tesla. Our experiment paves the path to the realization of gate-controlled ballistic valley transport and the development of valleytronic applications in atomically thin materials.

Topological Valley Currents in Bilayer Graphene/Hexagonal Boron Nitride Superlattices

Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures

Detecting Topological Currents in Graphene Superlattices

Have Mysterious Topological Valley Currents Been Observed in Graphene Superlattices?

Interplay of valley, layer and band topology towards interacting quantum phases in moiré bilayer graphene

Bulk valley transport and Berry curvature spreading at the edge of flat bands

Single-Carrier Transport in Graphene/hBN Superlattices

Topological Valley Transport at Bilayer Graphene Domain Walls

Gate-controlled topological conducting channels in bilayer graphene

Gate-tunable valley currents, non-local resistances and valley accumulation in bilayer graphene nanostructures

Valley Hall Effect in Two-Dimensional Hexagonal Lattices

Gate-Tunable Topological Flat Bands in Trilayer Graphene-Boron Nitride Moiré Superlattices

Bilayer Graphene on hexagonal Boron Nitride and the Family of quantum MetaMaterial

Topological Bloch Bands in Graphene Superlattices

Deciphering The Origin Of Nonlocal Resistance In Multiterminal Graphene On Hexagonal-Boron-Nitride With Ab Initio Quantum Transport: Fermi Surface Edge Currents Rather Than Fermi Sea Topological Valley Currents

Tunable and giant valley-selective Hall effect in gapped bilayer graphene

Topological Valley Plasmons in Twisted Monolayer-Bilayer Graphene Moiré Superlattices

Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point

Quantum Valley and Sub-valley Hall Effect in the Large Angle Twisted Bilayer Graphene

Gate-tunable topological valley transport in bilayer graphene

Emergent Inhomogeneity and Nonlocality in a Graphene Field-Effect Transistor on a Near-Parallel Moiré Superlattice of Transition Metal Dichalcogenides