Abstract:A two-dimensional electron system placed in a magnetic field develops Landau levels, where strong Coulomb interactions lead to the appearance of many-body correlated ground states. Quantum numbers similar to the electron spin enable the understanding and control of complex ground state order and collective excitations. Owing to its spin, valley and orbital degrees of freedom, Bernal-stacked bilayer graphene offers a rich platform to pursue correlated phenomena in two dimensions. In this work, we fabricate dual-gated Bernal-stacked bilayer graphene devices and demonstrate unprecedented fine control over its valley isospin degrees of freedom using a perpendicular electric field. Higher sample quality enables us to probe regimes obscured by disorder in previous studies. We present evidence for a new even-denominator fractional quantum Hall state at filling factor {\nu} = 5/2. The 5/2 state is found to be spontaneously valley polarized in the limit of vanishing valley Zeeman splitting, consistent with a theoretical prediction made regarding the spin polarization of the Moore-Read state. In the vicinity of the even-denominator fractional quantum Hall states, we observe the appearance of the predicted Levin-Halperin daughter states of the Moore-Read Pfaffian wave function at {\nu}= 3/2, 7/2, and -1/2 and of the anti-Pfaffian at {\nu}= 5/2. These observations suggest the breaking of particle-hole symmetry in bilayer graphene. We construct a comprehensive valley polarization phase diagram for the Jain sequence fractional states surrounding filling factor 3/2. These results are well explained by a two-component composite fermion model, further demonstrating the SU(2) nature of the valley isospin in bilayer graphene. Our experiment paves the path for future efforts of manipulating the valley isospin in bilayer graphene to engineer exotic topological orders and quantum information processes.

Gate-tunable valley currents, non-local resistances and valley accumulation in bilayer graphene nanostructures

Tunable valley Hall effect in gate-defined graphene superlattices

Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures

Gate-controlled topological conducting channels in bilayer graphene

Topological Valley Currents in Bilayer Graphene/Hexagonal Boron Nitride Superlattices

Valley current generation using biased bilayer graphene dots

Gate-tunable topological valley transport in bilayer graphene

Non-conservation of the valley density and its implications for the observation of the valley Hall effect

Revealing the non-adiabatic and non-Abelian multiple-band effects via anisotropic valley Hall conduction in bilayer graphene

Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene

Current switching of valley polarization in twisted bilayer graphene

Nonconservation of the Valley Density and its Implications for the Observation of the Valley Hall Effect

Tunable and giant valley-selective Hall effect in gapped bilayer graphene

Giant High-order Nonlinear and Nonreciprocal Electrical Transports Induced by Valley Flipping in Bernal Bilayer Graphene

Quantum Valley and Sub-valley Hall Effect in the Large Angle Twisted Bilayer Graphene

Valley-dependent transport through graphene quantum dots due to proximity-induced, staggered spin-orbit couplings

Nonlinear valley and spin valves in bilayer graphene

Valley to charge current conversion in graphene grain boundaries

Gate Controlled Valley Polarizer in Bilayer Graphene

Nonlinear Valley Hall Effect

Valley Isospin Controlled Fractional Quantum Hall States in Bilayer Graphene