Topological Bloch Bands in Graphene Superlattices

Justin C. W. Song,Polnop Samutpraphoot,Leonid S. Levitov
DOI: https://doi.org/10.1073/pnas.1424760112
2015-06-03
Abstract:We outline an approach to endow a plain vanilla material with topological properties by creating topological bands in stacks of manifestly nontopological atomically thin materials. The approach is illustrated with a model system comprised of graphene stacked atop hexagonal-boron-nitride. In this case, the Berry curvature of the electron Bloch bands is highly sensitive to the stacking configuration. As a result, electron topology can be controlled by crystal axes alignment, granting a practical route to designer topological materials. Berry curvature manifests itself in transport via the valley Hall effect and long-range chargeless valley currents. The non-local electrical response mediated by such currents provides diagnostics for band topology.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
### What problems does this paper attempt to solve? This paper aims to explore how to endow ordinary materials with topological properties by constructing stacked structures of atom - thin materials (such as heterojunctions of graphene and hexagonal boron nitride), thereby creating energy bands with different topological invariants. Specifically, the authors focus on how to use the stacking of graphene and hexagonal boron nitride (hBN) to achieve this goal. #### Main problems: 1. **How to introduce topological properties into ordinary materials**: Researchers hope to control the topological characteristics of electrons by adjusting the stacking method of materials, thereby creating energy bands with specific topological invariants. This can be achieved by changing the lattice alignment angle, regulating the inter - layer coupling, etc. 2. **Explore the role of Berry curvature**: Berry curvature is an important physical quantity that describes the geometric phase of electrons in momentum space and plays a key role in topological materials. The authors studied how Berry curvature changes with the change of stacking configuration and how it affects the transport properties of electrons. 3. **Achieve tunable topological transitions**: By changing the twist angle between graphene and hBN, transitions between different topological states can be induced. This tunability provides a practical method for designing new topological materials. 4. **Verify the existence of topological energy bands**: The authors verified the existence of topological energy bands by analyzing phenomena such as the valley Hall effect and long - range chargeless valley currents, and proposed these phenomena as means of diagnosing topological properties. #### Specific methods: - **Model system**: The authors selected a heterojunction composed of graphene and hexagonal boron nitride as a model system. Since their lattice constants are similar, a Moire superlattice can be formed, and its topological properties can be changed by adjusting the twist angle. - **Theoretical analysis**: The authors used an effective Hamiltonian to describe the electronic structure of the system and characterized the topological properties by calculating Berry curvature and Chern number (Cv). For commensurate stacking, the lowest conduction band has a non - zero Chern number \( C_v=\pm1 \), while for incommensurate stacking, the Chern number is zero \( C_v = 0 \). - **Experimental verification**: The authors also discussed how to detect and verify these topological properties through experimental means such as non - local resistance measurement. In particular, the non - local response caused by the valley Hall effect can be an effective method for detecting topological energy bands. #### Conclusion: Through the above research, the authors showed how to achieve energy bands with different topological properties through simple material stacking and twist - angle regulation. This provides a feasible way for designing and preparing new topological materials and provides a theoretical basis for future experimental research. --- In summary, the main purpose of this paper is to explore how to regulate the topological properties of electrons through the stacking structure of materials, especially to realize tunable topological energy bands in the heterojunction of graphene and hexagonal boron nitride.