Abstract:Abstract Silicon carbide has recently surged as an alternative material for scalable and integrated quantum photonics, as it is a host for naturally occurring color centers within its bandgap, emitting from the UV to the IR even at telecom wavelength. Some of these color centers have been proved to be characterized by quantum properties associated with their single-photon emission and their coherent spin state control, which make them ideal for quantum technology, such as quantum communication, computation, quantum sensing, metrology and can constitute the elements of future quantum networks. Due to its outstanding electrical, mechanical, and optical properties which extend to optical nonlinear properties, silicon carbide can also supply a more amenable platform for photonics devices with respect to other wide bandgap semiconductors, being already an unsurpassed material for high power microelectronics. In this review, we will summarize the current findings on this material color centers quantum properties such as quantum emission via optical and electrical excitation, optical spin polarization and coherent spin control and manipulation. Their fabrication methods are also summarized, showing the need for on-demand and nanometric control of the color centers fabrication location in the material. Their current applications in single-photon sources, quantum sensing of strain, magnetic and electric fields, spin-photon interface are also described. Finally, the efforts in the integration of these color centers in photonics devices and their fabrication challenges are described.

Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications

High-efficiency single photon emission from a silicon T-center in a nanobeam

Tuning Quantum Dot States with Optical Fields

Photolithographic Patterning of Organic Color-Centers.

Optical transition parameters of the silicon T centre

Quantum Photonics Incorporating Color Centers in Silicon Carbide and Diamond

Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers

Tuning color centers at a twisted interface

Cavity enhanced emission from a silicon T center

Cavity-coupled telecom atomic source in silicon

Color center in β -Ga2O3 emitting at the telecom range

Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics

Memory and transduction prospects for silicon T centre devices

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

Optoelectronics of Color Centers in Diamond and Silicon Carbide: From Single‐Photon Luminescence to Electrically Controlled Spin Qubits

Discovery of T center-like quantum defects in silicon

Solid-State Color Centers for Single-Photon Generation

Optical superradiance of a pair of color centers in an integrated silicon-carbide-on-insulator microresonator

Electrical Manipulation of Telecom Color Centers in Silicon

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

Silicon carbide color centers for quantum applications