Abstract:In this paper, we present the results of rigorous electromagnetic broadband simulations applied to CMOS image sensors as well as experimental measurements. We firstly compare the results of 1D, 2D, and 3D broadband simulations in the visible range (380nm-720nm) of a 1.75$\mu$m CMOS image sensor, emphasizing the limitations of 1D and 2D simulations and the need of 3D modeling, particularly to rigorously simulate parameters like Quantum Efficiency. Then we illustrate broadband simulations by two proposed solutions that improve the spectral response of the sensor: an antireflective coating, and the reduction of the optical stack. We finally show that results from experimental measurements are in agreement with the simulated results.

What problem does this paper attempt to address?

The paper primarily focuses on optimizing the optical performance of CMOS image sensors during the miniaturization process, particularly addressing the challenges that arise when pixel size is reduced to below 2 micrometers. Specifically, the paper addresses the following key issues: 1. **Selection and Validation of Simulation Methods**: To accurately simulate the optical characteristics of CMOS image sensors, the researchers chose an electromagnetic simulation tool based on the Finite-Difference Time-Domain (FDTD) method. By comparing the results of 1D, 2D, and 3D broadband simulations, they validated the necessity of 3D simulations for accurately describing sensor characteristics. Additionally, convergence tests were conducted to ensure the accuracy of the simulation results. 2. **Analysis of Geometric Structure Effects**: By comparing simulation results of different dimensions (1D, 2D, and 3D), the impact of geometric structures on the simulation results was revealed. For example, in 2D simulations, metal lines are considered infinitely long, leading to deviations between the simulation results and actual conditions. 3D simulations can more realistically reflect the actual geometric structure, thereby providing more accurate optical performance predictions. 3. **Sensor Performance Optimization Schemes**: Two methods were proposed to improve sensor performance: - **Anti-Reflective Coating Design**: By optimizing the thickness of the silicon nitride layer, reflection losses at the silicon interface were reduced, thereby increasing the sensor's sensitivity. Simulation results showed that the transmission rate increased by approximately 1.08 times in the green spectrum range. - **Reduction of Optical Stack Height**: By removing some optical layers, the height of the sensor stack was reduced, thereby decreasing losses during the light propagation process and increasing the sensor's sensitivity. Simulation results indicated that this change could bring about an optical gain of approximately 1.15 times. 4. **Comparison of Experimental Measurements and Simulation Results**: To validate the effectiveness of the simulations, the researchers conducted experimental measurements of quantum efficiency (QE) and compared these data with the simulation results. The results showed good consistency between the simulation results and the experimental measurements, proving the effectiveness and accuracy of the proposed simulation methods. In summary, the paper aims to optimize the design of CMOS image sensors using 3D broadband FDTD optical simulation technology to overcome the optical limitations encountered during miniaturization, and the proposed methods were experimentally validated for their effectiveness.

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