Abstract:The topology of the Fermi surface significantly influences the transport properties of a material. Firstly measured through quantum oscillation experiments, the Fermi surfaces of crystals are now commonly characterized using angle-resolved photoemission spectroscopy (ARPES), given the larger information volume it provides. In the case of Weyl semimetals, ARPES has proven remarkably successful in verifying the existence of the Weyl points and the Fermi arcs, which define a Weyl Fermi surface. However, ARPES is limited in resolution, leading to significant uncertainty when measuring relevant features such as the distance between the Weyl points. While quantum oscillation measurements offer higher resolution, they do not reveal insights into the cross-sectional shape of a Fermi surface. Moreover, both techniques lack critical information about transport, like the carriers mean free path. Here, we report measurements unveiling the distinctive peanut-shaped cross-section of the Fermi surface of Weyl fermions and accurately determine the separation between Weyl points in the Weyl semimetal NbP. To surpass the resolution of ARPES, we combine quantum oscillation measurements with transverse electron focusing (TEF) experiments, conducted on microstructured single-crystals. The TEF spectrum relates to the Fermi surface shape, while the frequency of the quantum oscillations to its area. Together, these techniques offer complementary information, enabling the reconstruction of the distinctive Weyl Fermi surface geometry. Concurrently, we extract the electrical transport properties of the bulk Weyl fermions. Our work showcases the integration of quantum oscillations and transverse electron focusing in a singular experiment, allowing for the measurements of complex Fermi surface geometries in high-mobility quantum materials.

Precise Fermi-level engineering in a topological Weyl semimetal via fast ion implantation

Large Fermi‐Energy Shift and Suppression of Trivial Surface States in NbP Weyl Semimetal Thin Films

Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2Se3

Control of Electron Tunnelling by Fine Band Engineering of Semiconductor Potential Barriers.

Topological Field-Effect Transistor Based on Quasi-Two-Dimensional Tellurium Flakes

Controllable Strain-driven Topological Phase Transition and Dominant Surface State Transport in High-Quality HfTe5 Samples

Probing the shape of the Weyl Fermi surface of NbP using transverse electron focusing

Non-invasive digital etching of van der Waals semiconductors

Terahertz control of surface topology probed with subatomic resolution

Fermi Level Tuning in Sn1-xPbxTe/Pb Heterostructure Via Changing Interface Roughness

Nanoscale devices with superconducting electrodes to locally channel current in 3D Weyl semimetals

Stable topological insulators achieved using high energy electron beams

Topological Insulator-Based van der Waals Heterostructures for Effective Control of Massless and Massive Dirac Fermions

Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams

A strongly robust topological Weyl fermion semimetal state in Ta3S2

Tailoring Photocurrent in Weyl Semimetals via Intense Laser Irradiation

An ultrafast symmetry switch in a Weyl semimetal

Topological frequency conversion in Weyl semimetals

Controllable strain-driven topological phase transition and dominant surface-state transport in HfTe5

This took us a Weyl: synthesis of a semimetallic Weyl ferromagnet with point Fermi surface