Topological Field-Effect Transistor Based on Quasi-Two-Dimensional Tellurium Flakes

Bin Cheng,Lin Li,Nan Zhang,Ling Zhang,Xianglin Li,Zhiyong Lin,Hui Li,Zhengfei Wang,Changgan Zeng
DOI: https://doi.org/10.1103/physrevapplied.17.054044
IF: 4.6
2022-05-27
Physical Review Applied
Abstract:For semiconductors, adding a degree of freedom beyond charge, e.g., spin and valley, will lead to alternative physics and device applications. Here, we demonstrate that another electronic degree of freedom, the chirality of Weyl node, can be used in the Weyl semiconductor tellurium, a unique system harnessing intriguing Weyl physics and high tunability of the semiconductor. By constructing a field-effect device based on quasi-two-dimensional tellurium flakes, the Fermi level can be effectively tuned from the top of valence bands, where the Weyl nodes locate at, into the bandgap via electrostatic gating. In addition to a significant reduction of channel conductivity, a transition from chiral-anomaly-induced negative magnetoresistance to conventional positive magnetoresistance occurs at the same time, indicating complete suppression of the chirality-related topological transport. The simultaneous switch of both conducting and topological states is unprecedented in previous Weyl semimetals. Our findings pave the way for developing new-principle semiconductor devices with fascinating functionalities. https://doi.org/10.1103/PhysRevApplied.17.054044 © 2022 American Physical Society
physics, applied
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