Abstract:The world of photon science experiences significant advancements since the advent of synchrotron light sources with unprecedented brilliance, intensity and pulse repetition rates, with large implications on the detectors used for instrumentation. Here, an overview about the work on this field carried out at the semiconductor laboratory of the Max-Planck-Society (MPG HLL) is given. Main challenges are high dynamic range to resolve faint features at the fringes of scatter images as well as structures in bright peaks, and high bandwidth to fully exploit the fast timing capability of the source. A newly developed device to improve the signal-to-noise-ratio (SNR) at high bandwidths is the so-called MARTHA (Monolithic Array of Reach-Through Avalanche Photodiodes) structure, which integrates an array of APDs on a monolithic substrate. The reach-through architecture assures near 100% fill factor and allows implementing a thin entrance window with optimized quantum efficiency for low energy X-rays. The structures operate in proportional mode with adjustable gain, and can serve as a drop-in replacement for PAD detectors in hybrid pixel systems. A more sophisticated solution for low to medium frame rate applications with high contrast requirement are pnCCDs with high dynamic range in the pixel area featuring DEPFET based readout nodes with non-linear amplification (NLA). The high dynamic range mode has been demonstrated for pnCCD devices with a pixel size down to 75 μm 2 . Framerates of up to 1 kHz are possible for a 1 Megapixel detector. Small size prototypes of these structures have recently been manufactured. Modified DEPFET structures with build-in non-linear amplification are also used to implement active pixel detectors optimized for high dynamic range. Successfully prototyped for the DSSC sensors (DEPFET Sensor with Signal Compression) at the XFEL, these structures are increasingly being used in applications requiring high contrast and intensity, e.g., TEM imaging. Charge handling capability and output characteristics can be tailored to the requirements, as well as pixel geometry and size. The large intrinsic gain of the DEPFET provides excellent SNR even at fast timing. Pixels can be read with a speed of 100 ns, the resulting frame rate depends on the degree of readout parallelization.

First operation of an ACHINOS-equipped Spherical Proportional Counter with individual anode read-out

First operation of an ACHINOS-equipped spherical proportional counter with individual anode read-out

Characterization of hemispherical area X-ray detector based on set of proportional counters with needle anodes

Data acquisition system for a 146-channel counter of protons in particle therapy

A multiball read-out for the spherical proportional counter

A Prototype Readout System for the ALPIDE Pixel Sensor

Towards a New Generation of Monolithic Active Pixel Sensors

X-ray Metrology of an Array of Active Edge Pixel Sensors for Use at Synchrotron Light Sources

A Novel High Dynamic-Range SiPM for Scintillator-Based Hadronic Calorimetry

First Experimental Evaluation of a High-Resolution Deep Silicon Photon-Counting Sensor

The Development of a Readout ASIC for TPC Based X-ray Polarimeter

Novel sensor developments for photon science at the MPG semiconductor laboratory

Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

Characterizing IMARAD CZT Detectors with Time Resolved Anode and Cathode Signals

First functionality tests of a 64 x 64 pixel DSSC sensor module connected to the complete ladder readout

Scalable DAQ system operating the CHIPS-5 neutrino detector

Performance of a coarsely pixelated LAPPD photosensor for the SoLID gas Cherenkov detectors

Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process

Versatile systems for characterization of large-area silicon pad sensors for highly-granular calorimetry

Prototype of a front-end readout ASIC designed for the Water Cherenkov Detector Array in LHAASO

First measurements with monolithic active pixel test structures produced in a 65 nm CMOS process