Development of a Selective Wet-Chemical Etchant for 3D Structuring of Silicon via Nonlinear Laser Lithography

Mona Zolfaghari Borra,Behrad Radfar,Hisham Nasser,Tahir Çolakoğlu,Onur Tokel,Ahmet Turnalı,Merve Demirtaş,Hande Ustunel,Daniele Toffoli,F. Ömer İlday,Raşit Turan,Ihor Pavlov,Alpan Bek

2023-08-14

Abstract:Recently-demonstrated high-quality three-dimensional (3D) subsurface laser processing inside crystalline silicon (c-Si) wafers opens a door to a wide range of novel applications in multidisciplinary research areas. Using this technique, a novel maskless micro-pillars with precise control on the surface reflection and coverage are successfully fabricated by etching the laser processed region of c-Si wafer. To achieve this, a particular selective wet chemical etching is developed to follow subsurface laser processing of c-Si to reveal the desired 3D structures with smooth surfaces. Here, we report the development of a novel chromium-free chemical etching recipe based on copper nitrate, which yields substantially smooth surfaces at high etch rate and selectivity on the both laser-processed Si surface and subsurface, i.e., without significant etching of the unmodified Si. Our results show that the etch rate and surface morphology are interrelated and strongly influenced by the composition of the adopted etching solution. After an extensive compositional study performed at room temperature, we identify an etchant with a selectivity of over 1600 times for laser-modified Si with respect to unmodified Si. We also support our findings using density functional theory calculations of HF and Cu adsorption energies, indicating significant diversity on the c-Si and laser-modified surfaces.

Applied Physics,Materials Science,Optics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to develop a selective wet - chemical etchant for three - dimensional structuring of silicon by nonlinear laser lithography. Specifically, the authors strive to develop a new etchant formulation based on copper nitrate. This etchant can efficiently remove silicon in the laser - processed area without significantly eroding unmodified silicon, thereby revealing the desired three - dimensional structure and providing a smooth surface. The paper mentions that currently, most research on laser - based 3D processing of silicon is limited to creating optical refractive index changes, and few studies have demonstrated the creation of independent three - dimensional structures through chemical etching. Therefore, developing an efficient and highly selective etchant is crucial for achieving this goal. In addition, the authors also support their findings through density functional theory (DFT) calculations, explaining the differences in adsorption energies of HF and Cu on different surfaces, further validating the selectivity of the etchant.

Development of a Selective Wet-Chemical Etchant for 3D Structuring of Silicon via Nonlinear Laser Lithography

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