Francisco Pasadas,Alberto Medina-Rull,Francisco G. Ruiz,Javier Noe Ramos-Silva,Anibal Pacheco-Sanchez,Mari Carmen Pardo,Alejandro Toral-Lopez,Andrés Godoy,Eloy Ramírez-García,David Jiménez,Enrique G. Marin
Abstract:Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the device polarity, by biasing the graphene transistor around the vertex of the V-shaped transfer curve, enables to redesign and highly simplify conventional analog circuits, and simultaneously to seek for multifunctionalities specially in the HF domain. We present, here, new insights for the design of different HF applications such as power amplifiers, mixers, frequency multipliers, phase shifters, and modulators that specifically leverage the inherent ambipolarity of graphene-based transistors.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: how to utilize the ambipolar conductance characteristics of graphene field - effect transistors (GFETs) to design and simplify high - frequency (HF) analog electronic circuits, thereby achieving multifunctionality and performance improvement. Specifically, the paper explores redesigning and simplifying traditional analog circuits by manipulating the polarity of GFETs, that is, adjusting the gate voltage near the vertex of the V - shaped transfer curve, and simultaneously exploring its multifunctional applications in the high - frequency field.
### Main problems and objectives of the paper
1. **Amplitude control of high - frequency signals**: for example, the design of power amplifiers.
2. **Frequency control of high - frequency signals**: such as the design of mixers and frequency multipliers.
3. **Phase control of high - frequency signals**: such as the design of phase shifters and modulators.
### Advantages of graphene field - effect transistors (GFETs)
- **Ambipolar conductance**: Graphene materials have unique ambipolar conductance characteristics and can switch between electron and hole conduction in the same device, which is impossible for traditional silicon - based and III - V semiconductor devices.
- **High - frequency performance**: The carrier mobility and saturation velocity of graphene are very high, making graphene - based devices perform excellently in high - frequency applications.
- **Flexibility and compatibility**: Graphene materials have good mechanical flexibility, anti - reflection and anti - corrosion properties, are suitable for use in flexible electronics and wearable devices, and can be compatible with existing CMOS technology.
### Main research contents
The paper proposes several new design ideas using the ambipolar characteristics of GFETs:
1. **Frequency multiplier**: By adjusting the resistance value between two cascaded GFETs, a W - shaped transfer characteristic curve is generated, thereby achieving the function of tripling or quadrupling the frequency.
2. **Sub - harmonic mixer**: By using the second - order response characteristics of GFETs, the frequency of the local oscillator (LO) signal is doubled before mixing, reducing circuit complexity.
3. **Power amplifier**: By optimizing the small - signal model and contact resistance of GFETs, an efficient high - frequency power amplifier is designed, which can provide symmetric power gain in electron and hole conduction modes.
### Conclusion
By making full use of the ambipolar characteristics of graphene field - effect transistors, the paper proposes a series of novel high - frequency circuit design schemes, which not only simplify the design of traditional circuits but also improve the multifunctionality and performance of the system, paving the way for future high - frequency wireless communication systems.
### Formula summary
- **Dirac voltage formula**:
\[
V_{\text{Dirac}}=V_{G0}+\frac{V_D + V_S}{2}
\]
where \(V_{G0}\) is the offset voltage, and \(V_D\) and \(V_S\) are the intrinsic bias voltages of the drain and source, respectively.
- **Maximum stable gain formula**:
\[
G_{MS}=\frac{1}{\omega\sqrt{\omega^2(C_{dg}+R_sA)^2+(g_m + R_s\omega^2B)^2}}
\]
where \(A=(C_{gd}+C_{gs})g_{ds}+C_{gd}g_m\), and \(B = C_{gd}(C_{gd}+C_{gs}+C_{sd}-C_{dg})+C_{gs}C_{sd}\).
These formulas and design ideas demonstrate the great potential of graphene field - effect transistors in high - frequency electronics.