Abstract:Field-effect transistor (FET) devices composed of a MoS2-graphene heterostructure can combine the advantages of high carrier mobility in graphene with the permanent band gap of MoS2 for digital applications. Herein, we investigate the electron transfer, photoluminescence, and gate-controlled carrier transport in such a heterostructure. We show that the junction is a Schottky barrier, whose height can be artificially controlled by gating or doping graphene. When the applied gate voltage (or the doping level) is zero, the photoexcited electron-hole pairs in monolayer MoS2 can be split by the heterojunction, significantly reducing the photoluminescence. By applying negative gate voltage (or p-doping) in graphene, the interlayer impedance formed between MoS2 and graphene exhibits an 100-fold increase. For the first time, we show that the gate-controlled interlayer Schottky impedance can be utilized to modulate carrier transport in graphene, significantly depleting the hole transport, but preserving the electron transport. Accordingly, we demonstrate a new type of FET device, which enables a controllable transition from NMOS digital to bipolar characteristics. In the NMOS digital regime, we report a very high room temperature on/off current ratio (ION/IOFF ∼ 36) in comparison to graphene-based FET devices without sacrificing the field-effect electron mobilities in graphene. By engineering the source/drain contact area, we further estimate that a higher value of ION/IOFF up to 100 can be obtained in the device architecture considered. The device architecture presented here may enable semiconducting behavior in graphene for digital and analogue electronics.

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Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Multifunctional tunneling devices based on graphene/h-BN/MoSe2 van der Waals heterostructures

A New Device Architecture Based on Two Dimensional Van Der Waals Heterostructures

Vertical WS2/SnS2 Van Der Waals Heterostructure for Tunneling Transistors.

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Exotic Tunneling Resistance in Graphene/topological Insulator Vertical Junction

Control of Electron Tunnelling by Fine Band Engineering of Semiconductor Potential Barriers.

Gate-Tunable Junctions within Monolayer MoS 2 –WS 2 Lateral Heterostructures

Tunneling conductance of hybrid bilayer-single graphene junctions

Various and Tunable Transport Properties of Wse2 Transistor Formed by Metal Contacts

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

Tuning On-Off Current Ratio and Field-Effect Mobility in A Mos2-Graphene Heterostructure Via Schottky Barrier Modulation

Large tunneling magnetoresistance and its high bias stability in Weyl half-semimetal based lateral magnetic tunnel junctions

Bilayer Insulator Tunnel Barriers for Graphene-Based Vertical Hot-electron Transistors

Independent Band Modulation in 2D Van Der Waals Heterostructures Via a Novel Device Architecture

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization

Tunable Electronic Properties and Negative Differential Resistance Effect of the Intrinsic Type-Iii Zrs2/Wte2 Van Der Waals Heterostructure