Abstract:The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

Efficient thermo-spin conversion in van der Waals ferromagnet FeGaTe

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Modulating Above-Room-temperature Magnetism in Ga-implanted Fe5GeTe2 Van Der Waals Magnets

Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet

Highly efficient room-temperature nonvolatile magnetic switching by current in Fe3GaTe2 thin flakes

Highly Efficient Spin Injection and Readout Across Van Der Waals Interface.

Room-Temperature Highly Efficient Nonvolatile Magnetization Switching by Current in Van Der Waals Fe3GaTe2 Devices.

Room-temperature van der Waals 2D ferromagnet switching by spin-orbit torques

Room-Temperature Highly Efficient Nonvolatile Magnetization Switching by Current in van der Waals Fe 3 GaTe 2 Devices

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

Fe3GaTe2/MoSe2 Ferromagnet/Semiconductor 2D van der Waals Heterojunction for Room-Temperature Spin-Valve Devices

Current-induced switching of a van der Waals ferromagnet at room temperature

Room-temperature spin-valve devices without spacer layers based on Fe3GaTe2 van der Waals homojunctions

A Feasible Way to Find Above-Room-Temperature Ferromagnetic Spintronic Materials: from Flat Band Engineering

Sub-THz High Spin Precession Frequency in van der Waals Ferromagnet Fe3GaTe2

Tunable high-temperature itinerant antiferromagnetism in a van der Waals magnet

Room temperature energy-efficient spin-orbit torque switching in wafer-scale all-vdW heterostructure

Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators

Orbital torque switching of room temperature two-dimensional van der Waals ferromagnet Fe3GaTe2