Fully epitaxial fcc(111) magnetic tunnel junctions with a Co90Fe10/MgAlO/Co90Fe10 structure

Jieyuan Song,Thomas Scheike,Cong He,Zhenchao Wen,Tadakatsu Ohkubo,Kazuhiro Hono,Hiroaki Sukegawa,Seiji Mitani

2023-08-08

Abstract:Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresistive memories; however, the limited material selection of (001)-type MTJs hinders the further development of spintronic devices. Here, as an alternative to the (001)-type MTJs, an fcc(111)-type MTJ using a fully epitaxial CoFe/rock-salt MgAlO (MAO)/CoFe is explored to introduce close-packed lattice systems into MTJs. Using an atomically flat Ru(0001) epitaxial buffer layer, fcc(111) epitaxial growth of the CoFe/MAO/CoFe trilayer is achieved. Sharp CoFe(111)/MAO(111) interfaces are confirmed due to the introduction of periodic dislocations by forming a 5:6 in-plane lattice matching structure. The fabricated (111) MTJ exhibits a tunnel magnetoresistance ratio of 37% at room temperature (47% at 10 K). Symmetric differential conductance curves with respect to bias polarity are observed, indicating the achievement of nearly identical upper and lower MAO interface qualities. Despite the charge-uncompensated (111) orientation for a rock-salt-like MAO barrier, the achievement of flat, stable, and spin-polarized barrier interfaces opens a promising avenue for expanding the design of MTJ structures.

Materials Science

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to develop a new type of face - centered cubic (fcc) (111) magnetic tunnel junction (MTJ), in order to overcome the problem of limited material selection in traditional body - centered cubic (bcc) (001) - type MTJ, and to explore the possibility of improving the performance of spintronic devices by introducing a closely - packed lattice system. Specifically, a fully epitaxially - grown fcc(111) - type MTJ based on the CoFe/MgAlO/CoFe structure is proposed in the paper, aiming to achieve a higher tunneling magnetoresistance ratio (TMR) and more stable interface quality, thus providing a new direction for the design of high - density magnetic random - access memory (MRAM) and high - sensitivity magnetic sensors.

The key innovation points of the paper are as follows:
- **Materials and Structures**: CoFe is used as the ferromagnetic layer and MgAlO as the insulating barrier to construct an fcc(111) - type MTJ structure, which is different from the traditional bcc(001) - type MTJ.
- **Preparation Methods**: By combining magnetron sputtering and electron - beam evaporation techniques, the fully epitaxial growth of the CoFe/MgAlO/CoFe sandwich structure is achieved, ensuring good crystallinity and interface quality between each layer.
- **Performance Evaluation**: The TMR performance of the prepared MTJ at room temperature and low temperature is studied, and TMR ratios as high as 37% (room temperature) and 47% (10K) are observed, indicating that this new structure has good application potential.

These efforts aim to break through the material limitations in existing MTJ designs and provide more design flexibility and technical possibilities for future spintronic devices.