Abstract:Efficient generation and manipulation of spin signals in a given material without invoking external magnetism remain one of the challenges in spintronics. The spin Hall effect (SHE) and Rashba-Edelstein effect (REE) are well-known mechanisms to electrically generate spin accumulation in materials with strong spin-orbit coupling (SOC), but the exact role of the strength and type of SOC, especially in crystals with low symmetry, has yet to be explained. In this study, we investigate REE in two different families of non-magnetic chiral materials, elemental semiconductors (Te and Se) and semimetallic disilicides (TaSi$_2$ and NbSi$_2$), using an approach based on density functional theory (DFT). By analyzing spin textures across the full Brillouin zones and comparing them with REE magnitudes calculated as a function of chemical potential, we link specific features in the electronic structure with the efficiency of the induced spin accumulation. Our findings show that magnitudes of REE can be increased by: (i) the presence of purely radial (Weyl-type) spin texture manifesting as the parallel spin-momentum locking, (ii) high spin polarization of bands along one specific crystallographic direction, (iii) low band velocities. By comparing materials possessing the same crystal structures, but different strengths of SOC, we conclude that larger SOC may indirectly contribute to the enhancement of REE. It yields greater spin-splitting of bands along specific crystallographic directions, which prevents canceling the contributions from the oppositely spin-polarized bands over wider energy regions and helps maintain larger REE magnitudes. We believe that these results will be useful for designing spintronics devices and may aid further computational studies searching for efficient REE in materials with different symmetries and SOC strengths.

Over-Barrier Photoelectron Emission with Rashba Spin-Orbit Coupling

Large Tunable Rashba Spin Splitting of A Two-Dimensional Electron Gas in Bi2se3

Switchable Enhanced Spin Photocurrent In Rashba And Cubic Dresselhaus Ferroelectric Semiconductors

Orbital mapping of energy bands and the truncated spin polarization in three-dimensional Rashba semiconductors

Rashba Effect in Pbte/Pbsrte Asymmetric Quantum Wells

Spin orbit coupling enhanced thermionic cooling in two-dimensional semiconductor structures

Large Rashba Splitting in Highly Asymmetric CdTe/PbTe/PbSrTe Quantum Well Structures

Highly Efficient Electric-Field Control of Giant Rashba Spin-Orbit Coupling in Lattice-Matched InSb/CdTe Heterostructures.

Rashba spin splitting in biased semiconductor quantum wells

Quantum oscillations in Rashba semiconductor BiTeCl

Collinear Rashba-Edelstein effect in non-magnetic chiral materials

Rashba spin-orbit coupling in graphene monolayer coated by periodic magnetic stripes

Microscopic mechanism for asymmetric charge distribution in Rashba-type surface states and the origin of the the energy splitting scale

Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon

Unconventional Thermoelectric Behaviors and Enhancement of Figure of Merit in Rashba Spintronic Systems

Tunable interfacial Rashba spin-orbit coupling in asymmetric AlxIn1-xSb/InSb/CdTe quantum well heterostructures

Tunable interfacial Rashba spin-orbit coupling in asymmetric Al_xIn_1-xSb/InSb/CdTe quantum well heterostructures

Thermoelectric Response of Spin Polarization in Rashba Spintronic Systems

Spin-orbit interaction enabled electronic Raman scattering from charge collective modes

The Giant Spin-to-Charge Conversion of the Layered Rashba Material BiTeI

Photo-induced Non-collinear Interlayer RKKY Coupling in Bulk Rashba Semiconductors