Thermoelectric Response of Spin Polarization in Rashba Spintronic Systems

Cong Xiao,Dingping Li,Zhongshui Ma
DOI: https://doi.org/10.1007/s11467-016-0566-5
2016-01-01
Frontiers of Physics
Abstract:Motivated by the recent discovery of a strongly spin–orbit-coupled two-dimensional (2D) electron gas near the surface of Rashba semiconductors BiTeX (X = Cl, Br, I), we calculate the thermoelectric responses of spin polarization in a 2D Rashba model. By self-consistently determining the energyand band-dependent transport time, we present an exact solution of the linearized Boltzmann equation for elastic scattering. Using this solution, we find a non-Edelstein electric-field-induced spin polarization that is linear in the Fermi energy E F when E F lies below the band crossing point. The spin polarization efficiency, which is the electric-field-induced spin polarization divided by the driven electric current, increases for smaller E F . We show that, as a function of E F , the temperature-gradient-induced spin polarization increases continuously to a saturation value when E F decreases below the band crossing point. As the temperature tends to zero, the temperature-gradient-induced spin polarization vanishes.
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