Defect-mediated Rashba engineering for optimizing electrical transport in thermoelectric BiTeI
Xin Li,Ye Sheng,Lihua Wu,Shunbo Hu,Jiong Yang,David J. Singh,Jihui Yang,Wenqing Zhang
DOI: https://doi.org/10.1038/s41524-020-00378-4
IF: 12.256
2020-07-28
npj Computational Materials
Abstract:Abstract The Rashba effect plays a vital role in electronic structures and related functional properties. The strength of the Rashba effect can be measured by the Rashba parameter α R ; it is desirable to manipulate α R to control the functional properties. The current work illustrates how α R can be systematically tuned by doping, taking BiTeI as an example. A five-point-spin-texture method is proposed to efficiently screen doped BiTeI systems with the Rashba effect. Our results show that α R in doped BiTeI can be manipulated within the range of 0–4.05 eV Å by doping different elements. The dopants change α R by affecting both the spin–orbit coupling strength and band gap. Some dopants with low atomic masses give rise to unexpected and sizable α R , mainly due to the local strains. The calculated electrical transport properties reveal an optimal α R range of 2.75–3.55 eV Å for maximizing the thermoelectric power factors. α R thus serves as an effective indicator for high-throughput screening of proper dopants and subsequently reveals a few promising Rashba thermoelectrics. This work demonstrates the feasibility of defect-mediated Rashba engineering for optimizing the thermoelectric properties, as well as for manipulating other spin-related functional properties.
materials science, multidisciplinary,chemistry, physical