Synthesis of single-crystalline LuN films

Guanhua Su,Shuling Xiang,Jiachang Bi,Fugang Qi,Peiyi Li,Shunda Zhang,Shaozhu Xiao,Ruyi Zhang,Zhiyang Wei,Yanwei Cao
2023-07-17
Abstract:In the nitrogen-doped lutetium hydride (Lu-H-N) system, the presence of Lu-N chemical bonds plays a key role in the emergence of possible room-temperature superconductivity at near ambient pressure. However, due to the synthesis of single-crystalline LuN being a big challenge, the understanding of LuN is insufficient thus far. Here, we report on the epitaxial growth of single-crystalline LuN films. The crystal structures of LuN films were characterized by high-resolution X-ray diffraction. The measurement of low-temperature electrical transport indicates the LuN film is semiconducting from 300 to 2 K, yielding an activation gap of $\sim$ 0.02 eV. Interestingly, negative magnetoresistances can be observed below 12 K, which can result from the defects and magnetic impurities in LuN films. Our results uncover the electronic and magnetic properties of single-crystalline LuN films.
Materials Science,Strongly Correlated Electrons,Superconductivity
What problem does this paper attempt to address?
The main problems that this paper attempts to solve are the synthesis of single - crystal lutetium nitride (LuN) thin films and the study of their electronic and magnetic properties. Specifically: 1. **Synthesis challenges**: The synthesis of single - crystal LuN is a great challenge because this material can usually only be prepared under high - temperature and high - pressure conditions, for example, using a diamond anvil cell at 2000 K and 30 GPa. Due to the high difficulty of synthesis, the current understanding of LuN is still insufficient. 2. **Electronic and magnetic properties**: By synthesizing single - crystal LuN thin films, researchers hope to gain a deeper understanding of their electronic and magnetic properties. In particular, the existence of Lu - N chemical bonds in LuN is considered to play a key role in achieving room - temperature superconductivity near ambient pressure. However, due to the experimental difficulty in obtaining high - quality single - crystal LuN, the research progress in this area is limited. To overcome these challenges, the authors successfully synthesized single - crystal LuN thin films on yttrium aluminum oxide (YAO) substrates using radio - frequency magnetron sputtering technology and carried out detailed characterizations of their crystal structures, electrical transport properties, and magnetoresistance properties. The main findings include: - **Crystal structure**: High - resolution X - ray diffraction (XRD) confirmed that the LuN thin films have a cubic structure, which is consistent with the lattice parameters of bulk LuN. - **Electrical transport properties**: Low - temperature electrical transport measurements show that the LuN thin films behave as semiconductors in the temperature range from 300 K to 2 K, with an activation energy gap of about 0.02 eV. - **Magnetoresistance properties**: A significant negative magnetoresistance phenomenon was observed in the temperature range from 1.8 K to 12 K, which may be caused by defects or magnetic impurities in the films. Through these studies, the authors not only successfully synthesized single - crystal LuN thin films but also revealed their electronic and magnetic properties, providing an important experimental basis for further exploring the potential applications of LuN near ambient pressure.